SSM5G09TU Toshiba Semiconductor, SSM5G09TU Datasheet

no-image

SSM5G09TU

Manufacturer Part Number
SSM5G09TU
Description
DC-DC Converter
Manufacturer
Toshiba Semiconductor
Datasheet
DC-DC Converter
Absolute Maximum Ratings
Absolute Maximum Ratings
DIODE
Absolute Maximum Ratings
Combined Pch MOSFET and Schottky Diode into one Package.
Low R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Operating temperature
Note:
Note 1: Mounted on FR4 board
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
DS (ON)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm
Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
Characteristics
Characteristics
Characteristics
and Low V
Pulse
DC
F
SSM5G09TU
(Ta = 25°C) MOSFET
(Ta = 25°C) SCHOTTKY
(Ta = 25°C) MOSFET, DIODE COMMON
I
P
DP
Symbol
Symbol
Symbol
D
V
V
I
V
t = 10s
T
T
T
FSM
V
GSS
I
(Note 2)
(Note 1)
I
(Note 3)
T
RM
opr
DS
stg
D
ch
O
R
j
2 (50 Hz)
−55~125
−40~85
Rating
Rating
Rating
−1.5
−6.0
−12
150
125
2
0.5
0.8
0.5
±8
15
12
)
1
Unit
Unit
Unit
°C
°C
°C
°C
W
V
V
A
V
V
A
A
Weight: 7 mg (typ.)
JEDEC
JEITA
TOSHIBA
UFV
SSM5G09TU
www.DataSheet4U.com
2-2R1A
2007-11-01
Unit: mm

Related parts for SSM5G09TU

SSM5G09TU Summary of contents

Page 1

... 0 (50 Hz) A FSM °C T 125 j (Ta = 25°C) MOSFET, DIODE COMMON Symbol Rating Unit −55~125 °C T stg T opr −40~85 °C (Note SSM5G09TU www.DataSheet4U.com Unit: mm UFV ⎯ JEDEC ⎯ JEITA TOSHIBA 2-2R1A Weight (typ.) 2007-11-01 ...

Page 2

... The Channel-to-Ambient thermal resistance R the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. Equivalent Circuit and the drain power dissipation P th (ch-a) 2 SSM5G09TU www.DataSheet4U.com vary according to D 2007-11-01 ...

Page 3

... OUT = 4.7 Ω Duty < < Common source (c) V OUT Ta = 25°C requires a higher voltage than V GS (on) 3 SSM5G09TU www.DataSheet4U.com Min Typ. Max ⎯ ⎯ ±1 −12 ⎯ ⎯ −4 ⎯ ⎯ ⎯ ⎯ −1 −0.5 ⎯ −1.1 ⎯ ...

Page 4

... Be sure to take forward and reverse loss into consideration when you design. (Ta = 25°C) Symbol Test Condition = MHz SSM5G09TU www.DataSheet4U.com Min Typ. Max Unit ⎯ 0.33 0.39 V ⎯ 0.37 0.43 V ⎯ ⎯ μA 100 ⎯ ⎯ 2007-11-01 ...

Page 5

... DS 0.5 Common Source Ta=25℃ 0.4 0.3 0 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0 100 -25 5 SSM5G09TU www.DataSheet4U.com (MO S FET =-3V Ta=85℃ 25℃ -25℃ -0.5 -1 -1.5 -2 Gate-Source voltage V ( (MO S FET ) D S Common Source I =-0.6A D 25℃ Ta=85℃ -25℃ Gate-Source Voltage V ( (MO S FET) ...

Page 6

... Tatal gate charge Q (nC) g 1000 100 0 1000 toff 100 tf ton 0 SSM5G09TU www.DataSheet4U.com (MO S FET ) iss C oss C rss Common Source V =0V GS f=1MHz Ta=25℃ 100 Drain-Source voltage V ( (MO S FET) D Common Source V =-10V ...

Page 7

... Drain-Source current (MO S FET) D 600 Mounted on FR4 board (25.4 mm ・ 25.4 mm ・ 1 Pad: 645 mm2) 500 400 300 200 100 Ambient temperature Ta (℃) 7 SSM5G09TU www.DataSheet4U.com 1ms 10ms - 10 - 100 (V) DS 100 120 140 160 2007-11-01 ...

Page 8

... Ta = 25° 0.1 0.2 0.3 0.4 0.5 Forward voltage 0.1 0.01 Pulse measurement 0.001 0.6 0.7 0 (V) 3000 1000 100 10 1 0.01 8 SSM5G09TU www.DataSheet4U.com I – V (SBD 25° Reverse voltage V ( – V (SBD MHz Ta = 25°C 0 100 Reverse voltage V ...

Page 9

... Pulse width t ( – t (SBD Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 mm 0.01 0.1 1 Pulse width t ( SSM5G09TU www.DataSheet4U.com 10 100 1000 100 1000 2007-11-01 ...

Page 10

... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 SSM5G09TU www.DataSheet4U.com 20070701-EN GENERAL 2007-11-01 ...

Related keywords