SSM6P15FU Toshiba Semiconductor, SSM6P15FU Datasheet

SSM6P15FU

Manufacturer Part Number

SSM6P15FU

Description

High Speed Switching Applications Analog Switching Applications

Manufacturer

Toshiba Semiconductor

Datasheet

1.SSM6P15FU.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SSM6P15FU

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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High Speed Switching Applications

Analog Switch Applications

•

Absolute Maximum Ratings

(Q1, Q2 Common)

Marking

Handling Precaution

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature

Storage temperature range

Note:

Note 1: Total rating.

Small package

Low ON resistance : R

D Q

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

: R

Pulse

= 12 Ω (max) (@V

= 32 Ω (max) (@V

SSM6P15FU

(Ta = 25°C)

D (Note 1)

Symbol

GSS

stg

Equivalent Circuit

= −4 V)

= −2.5 V)

−55~150

Rating

−100

−200

−30

±20

200

150

Unit

°C

(top view)

Weight: 0.0068g(typ.)

JEDEC

JEITA

TOSHIBA

1: Source1

2: Gate1

3: Drain2

4: Source2

5: Gate2

6: Drain1

SSM6P15FU

w w w . D a t a S h e e t 4 U . c

2-2J1C

2007-11-01

―

Unit: mm

Related parts for SSM6P15FU

SSM6P15FU Summary of contents

Page 1

... D (Note 1) T 150 °C ch −55~150 T °C stg Equivalent Circuit (top view SSM6P15FU Unit Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 0.0068g(typ.) 2007-11-01 ...

Page 2

... off ( OUT OUT V requires higher voltage than V GS (on) < V < (off (on) 2 SSM6P15FU www.DataSheet4U.com MIN. TYP. MAX ⎯ ⎯ ± −30 ⎯ ⎯ ⎯ ⎯ −1 −1.1 ⎯ −1.7 ⎯ ⎯ −4 V ⎯ ...

Page 3

... SSM6P15FU www.DataSheet4U.com ID - VGS Ta=100°C 25°C -25° Gate-Source Voltage VGS(V) RDS(ON) - VGS Source Common ID= -1mA Ta=100°C 25° -25° Gate-Source Voltage VGS (V) Vth - Ta Common Source ID=-0.1mA VDS=-3V ...

Page 4

... Common Source VGS=0V -200 Ta=25°C -150 -100 -50 0 -1000 0 0.2 10000 toff 1000 tf Ciss 100 ton Coss tr Crss 10 -0.1 -100 120 140 160 4 SSM6P15FU www.DataSheet4U.com IDR - VDS 0.4 0.6 0.8 1 1.2 1.4 Drain-Source voltage VDS ( Common Source VDD= -5V VGS=0~-5V Ta=25°C -1 -10 -100 Drain Current ID (mA) 2007-11-01 ...

Page 5

... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6P15FU www.DataSheet4U.com 20070701-EN GENERAL 2007-11-01 ...

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