SSM6P16FE Toshiba Semiconductor, SSM6P16FE Datasheet
SSM6P16FE
Available stocks
Related parts for SSM6P16FE
SSM6P16FE Summary of contents
Page 1
... D T 150 °C ch −55~150 T °C stg 2 × 6) Equivalent Circuit SSM6P16FE Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC ― JEITA ― TOSHIBA 2-2N1D (top view) 2007-11-01 Unit: mm ...
Page 2
... − −2 off ( OUT OUT V requires a higher voltage than V GS (on) 2 SSM6P16FE www.DataSheet4U.com MIN. TYP. MAX ⎯ ⎯ ± −20 ⎯ ⎯ ⎯ ⎯ −1 −0.6 ⎯ −1.1 ⎯ ⎯ −4 V ⎯ ...
Page 3
... Gate - Source voltage V -2 Common Source -1 -0 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 −25 125 150 0 25 Ambient temperature Ta (°C) 3 SSM6P16FE www.DataSheet4U.com I – −25° (V) GS – Common Source Ta=100℃ 25℃ -25℃ - – Ta ...
Page 4
... Drain - Source V 10000 5000 3000 t off 1000 t f 500 300 t on 100 C iss -100 -0.1 140 140 160 160 4 SSM6P16FE www.DataSheet4U.com I – 0.4 0.6 0.8 1 1.2 1.4 ( – Common Source 0~-2 25°C -1 -10 -100 Drain current I ...
Page 5
... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6P16FE www.DataSheet4U.com 20070701-EN GENERAL 2007-11-01 ...