AO4420A Alpha & Omega Semiconductors, AO4420A Datasheet

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AO4420A

Manufacturer Part Number
AO4420A
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4420A
Manufacturer:
AOS/ 万代
Quantity:
20 000
www.DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.3mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
Standard Product AO4420A is Pb-free (meets ROHS
& Sony 259 specifications).
General Description
The AO4420A uses advanced trench technology to
provide excellent R
AO4420A
N-Channel Enhancement Mode Field Effect Transistor
S
S
S
G
AF
SOIC-8
B
DS(ON)
D
D
D
D
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
, shoot-through immunity and
C
A
A
A
=25°C unless otherwise noted
B
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
I
E
P
T
D
DM
AR
J
DS
GS
AR
D
, T
STG
G
Symbol
Features
V
I
R
R
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJL
= 13.7A (V
D
S
(V) = 30V
< 10.5mΩ (V
< 12mΩ (V
Maximum
-55 to 150
13.7
±12
Typ
9.7
3.1
30
60
20
60
28
54
21
2
GS
= 10V)
Rg,Ciss,Coss,Crss Tested
GS
GS
= 4.5V)
Max
= 10V)
40
75
30
UIS Tested
Units
Units
°C/W
°C/W
°C/W
www.aosmd.com
mJ
°C
W
V
V
A
A

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AO4420A Summary of contents

Page 1

... N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420A uses advanced trench technology to provide excellent R DS(ON) www.DataSheet4U.com body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. Standard Product AO4420A is Pb-free (meets ROHS & Sony 259 specifications ...

Page 2

... AO4420A Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 3

... AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 4. www.DataSheet4U.com 0 1 Figure 1: On-Regions Characteristi Figure 3: On-Resistance vs. Drain Current and Gate 25° Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...

Page 4

... AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =13. www.DataSheet4U.com 0 10 Figure 7: Gate-Charge Characteristics 100 R DS(ON) limited =150°C J(Max) T =25°C A 0.1 0.1 1 Figure 9: Maximum Forward Biased Safe Operating =40°C/W θJA 1 0.1 0.01 0.00001 0.0001 Alpha & Omega Semiconductor, Ltd. ...

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