AO4420A Alpha & Omega Semiconductors, AO4420A Datasheet
AO4420A
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AO4420A Summary of contents
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... N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420A uses advanced trench technology to provide excellent R DS(ON) www.DataSheet4U.com body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. Standard Product AO4420A is Pb-free (meets ROHS & Sony 259 specifications ...
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... AO4420A Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
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... AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 4. www.DataSheet4U.com 0 1 Figure 1: On-Regions Characteristi Figure 3: On-Resistance vs. Drain Current and Gate 25° Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
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... AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =13. www.DataSheet4U.com 0 10 Figure 7: Gate-Charge Characteristics 100 R DS(ON) limited =150°C J(Max) T =25°C A 0.1 0.1 1 Figure 9: Maximum Forward Biased Safe Operating =40°C/W θJA 1 0.1 0.01 0.00001 0.0001 Alpha & Omega Semiconductor, Ltd. ...