AO4429 Alpha & Omega Semiconductors, AO4429 Datasheet

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AO4429

Manufacturer Part Number
AO4429
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4429
Manufacturer:
AOS/ 万代
Quantity:
20 000
www.DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4429 uses advanced trench technology to
provide excellent R
charge. This device is suitable for use as a load
switch. The device is ESD protected. Standard
Product AO4429 is Pb-free (meets ROHS & Sony
259 specifications). AO4429L is a Green Product
ordering option. AO4429 and AO4429L are
electrically identical.
AO4429
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
S
S
S
G
B
T
T
T
T
Top View
A
A
A
A
SOIC-8
=25°C
=70°C
=25°C
=70°C
, and ultra-low low gate
C
A
A
A
=25°C unless otherwise noted
D
D
D
D
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
G
Features
V
I
Max R
Max R
ESD Rating: 4KV HBM
D
R
R
DS
θJA
θJL
= -15 A (V
(V) = -30V
DS(ON)
DS(ON)
Maximum
-55 to 150
D
S
-12.8
Typ
< 7.7mΩ (V
±20
-30
-15
-80
GS
< 12mΩ (V
3.1
26
50
14
2
= -10V)
Max
GS
GS
40
75
24
= -4.5V)
= -10V)
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4429 Summary of contents

Page 1

... The AO4429 uses advanced trench technology to provide excellent R www.DataSheet4U.com DS(ON) charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a Green Product ordering option. AO4429 and AO4429L are electrically identical. Top View S ...

Page 2

... AO4429 Electrical Characteristics (T Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 3

... AO4429 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -10V -4. www.DataSheet4U.com Fig 1: On-Region Characteristics 10 V =-4. Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd ...

Page 4

... AO4429 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =-15A www.DataSheet4U.com Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1s 1.0 T =150°C J(Max) T =25°C A 0.1 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note =40°C/W θ ...

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