AO4422A Alpha & Omega Semiconductors, AO4422A Datasheet

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AO4422A

Manufacturer Part Number
AO4422A
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4422A
Manufacturer:
AOS/ 万代
Quantity:
20 000
www.DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4422A uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4422A is Pb-free (meets ROHS & Sony
259 specifications). AO4422AL is a Green Product
ordering option. AO4422A and AO4422AL are
electrically identical.
AO4422A
N-Channel Enhancement Mode Field Effect Transistor
S
S
S
G
A
SOIC-8
DS(ON)
D
D
D
D
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. This
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G
Symbol
Features
V
I
R
R
D
R
R
DS
DS(ON)
DS(ON)
θJA
θJL
= 11A
D
S
(V) = 30V
< 15mΩ (V
< 24mΩ (V
Maximum
-55 to 150
Typ
±20
9.3
2.1
30
11
50
31
59
16
3
(V
GS
GS
GS
= 10V)
= 10V)
= 4.5V)
Max
40
75
24
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4422A Summary of contents

Page 1

... PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical. ...

Page 2

... AO4422A Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 3

... AO4422A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4. 10V www.DataSheet4U.com Fig 1: On-Region Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...

Page 4

... AO4422A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =11A www.DataSheet4U.com Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1.0 T =150°C J(Max) T =25°C A 0.1 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note =40°C/W θJA 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET ...

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