AO4442 Alpha & Omega Semiconductors, AO4442 Datasheet

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AO4442

Manufacturer Part Number
AO4442
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4442 uses advanced trench technology to
provide excellent R
operation with gate voltages from 4.5V to 25V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4442 is Pb-free
(meets ROHS & Sony 259 specifications). AO4442L
is a Green Product ordering option. AO4442 and
AO4442L are electrically identical.
AO4442
N-Channel Enhancement Mode Field Effect Transistor
A
DS(ON)
B
T
T
T
T
A
A
A
A
S
S
S
G
=25°C
=70°C
=25°C
=70°C
, low gate charge and
C
SOIC-8
A
A
A
=25°C unless otherwise noted
D
D
D
D
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
D
R
R
DS
DS(ON)
DS(ON)
θJA
θJL
= 3.1A (V
(V) = 75V
G
< 130mΩ (V
< 165mΩ (V
Maximum
-55 to 150
GS
Typ
±25
3.1
2.5
2.5
1.6
75
20
38
69
24
D
S
= 10V)
GS
GS
= 10V)
= 4.5V)
Max
50
80
30
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4442 Summary of contents

Page 1

... This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 specifications). AO4442L is a Green Product ordering option. AO4442 and AO4442L are electrically identical. Absolute Maximum Ratings T Parameter ...

Page 2

... AO4442 Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 3

... AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS www.DataSheet4U.com Fig 1: On-Region Characteristics 220 200 180 160 V GS 140 120 100 Figure 3: On-Resistance vs. Drain Current and Gate Voltage 240 220 200 180 160 140 120 100 Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =37. =3. www.DataSheet4U.com Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T J(Max) 10.0 R DS(ON) limited 1.0 1s 0.1 0.0 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note =50°C/W θJA 1 0.1 0.01 0.00001 0.0001 Alpha & Omega Semiconductor, Ltd. ...

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