AO4446 Alpha & Omega Semiconductors, AO4446 Datasheet
AO4446
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AO4446 Summary of contents
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... The AO4446 uses advanced trench technology to provide excellent R DS(ON) www.DataSheet4U.com gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Product ordering option. AO4446 and AO4446L are electrically identical SOIC-8 ...
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... AO4446 Electrical Characteristics (T Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
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... AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4.5V 5.0V 10V 20 10 www.DataSheet4U.com Fig 1: On-Region Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd 4. =3. ...
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... AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =15A www.DataSheet4U.com Figure 7: Gate-Charge Characteristics 100 R DS(ON) limited =150°C J(Max) T =25°C A 0.1 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note =40°C/W θ ...