AO4470 Alpha & Omega Semiconductors, AO4470 Datasheet

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AO4470

Manufacturer Part Number
AO4470
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4470
Manufacturer:
AOS/ 万代
Quantity:
20 000
www.DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4470 uses advanced trench technology to
provide excellent R
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion. Standard product AO4470 is Pb-free
(meets ROHS & Sony 259 specifications). AO4470L
is a Green Product ordering option. AO4470 and
AO4470L are electrically identical.
AO4470
N-Channel Enhancement Mode Field Effect Transistor
A
S
S
S
G
DS(ON)
SOIC-8
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
, shoot-through immunity,
C
A
A
D
D
D
D
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
D
R
R
DS
DS(ON)
DS(ON)
θJA
θJL
= 18A
(V) = 30V
< 5.5mΩ
< 6.2mΩ
Maximum
-55 to 150
Typ
±12
2.1
G
30
18
15
80
31
59
16
3
(V
(V
(V
D
S
GS
GS
GS
Max
= 10V)
40
75
24
= 10V)
= 4.5V)
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4470 Summary of contents

Page 1

... This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4470 is Pb-free (meets ROHS & Sony 259 specifications). AO4470L is a Green Product ordering option. AO4470 and AO4470L are electrically identical ...

Page 2

... AO4470 Electrical Characteristics (T Parameter Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 3

... AO4470 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 4.5V 80 10V www.DataSheet4U.com Figure 1: On-Region Characteristics 5.5 5.0 4.5 4.0 3 Figure 3: On-Resistance vs. Drain Current and FUNCTIONS AND RELIABILITY WITHOUT NOTICE Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd 2. =2V GS ...

Page 4

... AO4470 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =18A www.DataSheet4U.com Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1.0 T =150°C J(Max) T =25°C A 0.1 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note =40°C/W θJA 1 0.1 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. ...

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