AO4836 Alpha & Omega Semiconductors, AO4836 Datasheet

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AO4836

Manufacturer Part Number
AO4836
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4836
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4836
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4836 uses advanced trench technology to
provide excellent R
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters. It is ESD protected. AO4836 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4836L is a Green Product ordering option.
AO4836 and AO4836L are electrically identical.
S2
G2
S1
G1
A
SOIC-8
1
2
3
4
8
7
6
5
DS(ON)
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. The
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
DS
GS
D
J
, T
STG
Symbol
Features
V
I
R
R
ESD rating: 1500V (HBM)
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJL
= 7.2A
G1
(V) = 30V
< 24mΩ (V
< 40mΩ (V
Maximum
-55 to 150
1.44
Typ
±20
7.2
6.1
30
30
55
92
37
D1
S1
2
G2
GS
GS
= 10V)
= 4.5V)
Max
62.5
110
50
D2
S2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4836 Summary of contents

Page 1

... The DS(ON) two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters ESD protected. AO4836 is Pb- free (meets ROHS & Sony 259 specifications). AO4836L is a Green Product ordering option. AO4836 and AO4836L are electrically identical. ...

Page 2

... AO4836 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4836 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 5V 10V (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO4836 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =7. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 1ms 10 10ms 0.1s 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θJA 1 0.1 0.01 0.00001 ...

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