AO4850 Alpha & Omega Semiconductors, AO4850 Datasheet
AO4850
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AO4850 Summary of contents
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... Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4850 uses advanced trench technology to provide excellent R and low gate charge. The two MOSFETs DS(ON) may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications ...
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... AO4850 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 6V 10V (Volts) DS Fig 1: On-Region Characteristics 200 170 V V =4.5V GS 140 110 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 210 180 150 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 120 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...
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... AO4850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =30V DS I =3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 V 10.0 R DS(ON) 10ms limited 0.1s V 1.0 T =150°C J(Max =25°C A 10s 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...