AON7401 Alpha & Omega Semiconductors, AON7401 Datasheet

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AON7401

Manufacturer Part Number
AON7401
Description
30V P-Channel MOSFET
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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www.DataSheet.co.kr
Rev 4: Mar. 2011
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AON7401 uses advanced trench technology to
provide excellent R
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications.
General Description
Top View
B
A
Pin 1
DS(ON)
C
DFN 3x3_EP
T
T
T
T
T
T
T
T
C
C
A
A
C
C
A
A
=25° C
=100° C
=25° C
=70° C
=25° C
=100° C
=25° C
=70° C
, and ultra-low low gate charge
A
A D
A
Bottom View
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
I
P
P
T
Symbol
www.aosmd.com
D
DM
DSM
J
DS
GS
D
DSM
, T
R
R
STG
JA
JL
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
1
2
3
4
DS
DS(ON)
DS(ON)
Top View
(at V
Typ
3.5
30
60
(at V
GS
(at V
g
=-10V)
Tested
GS
GS
Maximum
8
7
6
5
-55 to 150
=-6V)
=-10V)
±25
-9.7
-30
-35
-23
-80
-12
3.1
29
12
2
30V P-Channel MOSFET
Max
4.2
40
75
G
AON7401
-30V
-29A
< 14m
< 17m
D
S
Units
Units
° C/W
° C/W
° C/W
Page 1 of 5
° C
W
W
V
V
A
A
Datasheet pdf - http://www.DataSheet4U.net/

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AON7401 Summary of contents

Page 1

... General Description The AON7401 uses advanced trench technology to provide excellent R DS(ON) with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. DFN 3x3_EP Top View Pin 1 Absolute Maximum Ratings T Parameter Drain-Source Voltage Gate-Source Voltage T Continuous Drain ...

Page 2

... =0V, V =-15V, f=1MHz =0V, V =0V, f=1MHz =-10V =-10V GEN I =-9A, dI/dt=500A =-9A, dI/dt=500A www.aosmd.com AON7401 Min Typ Max =0V -30 = =55° ±100 -1.7 -2.2 -3 =-5V - =125° 12 -0.7 -1 ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 V =-10V 1 =-9A D 1.4 17 1 =- 100 125 150 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+01 1.0E+00 40 1.0E-01 125° C 25° C 1.0E-02 1.0E-03 0.0 0.2 0.4 0.6 0.8 V (Volts) SD Figure 6: Body-Diode Characteristics (Note E) AON7401 175 0 1.0 1.2 Page Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 4

... DS Figure 8: Capacitance Characteristics 10000 T =25° 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 10 100 AON7401 25 30 1000 1000 Page Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 5

... Diode Recovery Test Circuit & Waveforms DUT Vgs L -Isd + Vdd VDC - -Vds www.aosmd.com Vgs Qg -10V Qgs Qgd Charge t t off d(off) f d(on Idt dI/ Vdd AON7401 90% 10% BV DSS I AR Page Datasheet pdf - http://www.DataSheet4U.net/ ...

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