UPA1456H NEC, UPA1456H Datasheet

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UPA1456H

Manufacturer Part Number
UPA1456H
Description
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No. IC-3521
Date Published September 1994 P
Printed in Japan
(O. D. No. IC-6340)
DESCRIPTION
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Circuits, T
Part Number
The
Easy mount by 0.1 inch of terminal interval.
High h
PA1456H
PA1456 is NPN silicon epitaxial Darlington
FE
300 s, Duty Cycle
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
for Darlington Transistor.
a
c
= 25 ˚C
= 25 ˚C
NPN SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
The information in this document is subject to change without notice.
10 %
V
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
***
–55 to +150 ˚C
*
Quality Grade
DATA SHEET
INDUSTRIAL USE
150
100
150
Standard
0.5
3.5
28
7
10
a
5
= 25 ˚C)
A/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
(B)
2
1
1.4
1 2 3 4 5 6 7 8 9 10
3
R
26.8 MAX.
0.6 ±0.1
1
CONNECTION DIAGRAM
PACKAGE DIMENSION
4
R
2
(in millimeters)
(C)
(E)
5
6
2.54
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
7
1
2
PA1456
= 3.0 k
= 300
.
.
.
.
8
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
4.0
©
9
0.5 ±0.1
1.4
10
1994

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UPA1456H Summary of contents

Page 1

... FE ORDERING INFORMATION Part Number Package PA1456H 10 Pin SIP Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) Turn On Time t on ...

Page 3

... TYPICAL CHARACTERISTICS (T a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1456 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 100 T - Ambient Temperature - ˚ CURRENT GAIN vs. COLLECTOR CURRENT ...

Page 4

TRANSIENT THERMAL RESISTANCE 100 10 1.0 0.1 0 Pulse Width - ms COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0 Collector ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1456 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 5 ...

Page 6

... The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. ...

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