UPA1790 NEC, UPA1790 Datasheet

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UPA1790

Manufacturer Part Number
UPA1790
Description
SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet
Document No.
Date Published
Printed in Japan
designed for motor driver applications.
ORDERING INFORMATION
Remark
DESCRIPTION
FEATURES
This product is N-and P-Channel MOS Field Effect Transistor
Dual chip type
Low on-resistance
N-Channel R
P-Channel R
Low input capacitance
N-Channel C
P-Channel C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
PART NUMBER
PA1790G
G14320EJ1V0DS00 (1st edition)
May 1999 NS CP(K)
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
R
R
DS(on)1
DS(on)2
DS(on)1
DS(on)2
iss
iss
= 180 pF TYP.
= 230 pF TYP.
= 0.45
= 0.74
= 0.12
= 0.19
N-AND P-CHANNEL POWER MOS FET
TYP. (V
TYP. (V
TYP. (V
TYP. (V
Power SOP8
PACKAGE
GS
GS
GS
GS
= –10 V, I
= –4 V, I
= 10 V, I
= 4 V, I
INDUSTRIAL USE
DATA SHEET
D
D
SWITCHING
D
D
= 0.5 A)
= –0.35 A)
= 0.5 A)
= –0.35 A)
MOS FIELD EFFECT TRANSISTOR
Gate
Gate
Protection
Diode
N-Channel
Source
8
1
PACKAGE DRAWING (Unit : mm)
Drain
5.37 MAX.
EQUIVARENT CIRCUIT
0.40
1.27
Body
Diode
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
Gate
Gate
Protection
Diode
N-Channel
P-Channel
PA1790
0.5 ±0.2
6.0 ±0.3
©
4.4
P-Channel
1
2
7,8 ; Drain 1
3
4
5,6 ; Drain 2
Source
Drain
; Source 1
; Gate 1
; Source 2
; Gate 2
Body
Diode
0.8
0.10
1999

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UPA1790 Summary of contents

Page 1

... PART NUMBER PA1790G Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...

Page 2

... Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Notes Duty Cycle Mounted on ceramic substrate of 2000 25°C, All terminals are connected.) A SYMBOL N-CHANNEL P-CHANNEL V 60 DSS V ±20 GSS I ±1.0 ...

Page 3

... Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form = 1 s Duty Cycle °C, All terminals are connected.) A SYMBOL TEST CONDITIONS 0.5 A DS(on 0.5 A DS(on GS(off ...

Page 4

P-CHANNEL CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 5

Data Sheet G14320EJ1V0DS00 PA1790 5 ...

Page 6

Data Sheet G14320EJ1V0DS00 PA1790 ...

Page 7

Data Sheet G14320EJ1V0DS00 PA1790 7 ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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