UPA2706GR NEC, UPA2706GR Datasheet

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UPA2706GR

Manufacturer Part Number
UPA2706GR
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC
Datasheet

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Part Number:
UPA2706GR
Manufacturer:
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Quantity:
20 000
Part Number:
UPA2706GR-E1-A
Manufacturer:
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Document No. G16236EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The PA2706GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
Low on-state resistance
R
R
Low C
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
iss
PA2706GR
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 15 m MAX. (V
= 22.5 m
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 660 pF TYP. (V
10 s, Duty Cycle
ch
MAX. (V
Note1
= 25°C, V
Note3
Note3
DS
A
GS
GS
= 25°C)
= 0 V)
GS
= 0 V)
= 10 V, I
DD
= 4.5 V, I
DS
N-CHANNEL POWER MOS FET
= 15 V, R
= 10 V, V
Note2
1%
Power SOP8
PACKAGE
D
= 5.5 A)
D
A
= 5.5 A)
G
= 25°C, All terminals are connected)
GS
DATA SHEET
= 25
I
D(pulse)
I
V
V
= 0 V)
D(DC)
E
T
SWITCHING
T
I
P
DSS
GSS
AS
stg
ch
AS
T
, L = 100 H, V
2
x 2.2 mm
MOS FIELD EFFECT TRANSISTOR
55 to + 150
12.1
150
2.0
30
11
20
11
44
GS
PACKAGE DRAWING (Unit: mm)
= 20
8
1
5.37 MAX.
0.40
mJ
°C
°C
1.27
W
V
V
A
A
A
0 V
+0.10
–0.05
0.78 MAX.
5
4
PA2706GR
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8 ; Drain
0.5 ±0.2
6.0 ±0.3
4.4
; Source
; Gate
Source
Drain
0.8
Body
Diode
0.10
2003

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UPA2706GR Summary of contents

Page 1

... Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device ...

Page 2

... DSS Starting T TEST CIRCUIT 3 GATE CHARGE D.U. PG 25°C, All terminals are connected.) A SYMBOL TEST CONDITIONS DSS GSS GS(off ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 4 0 Drain to Source Voltage - V DS ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed 4 4 100 T - Channel Temperature - °C ch SWITCHING ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 Starting 12 0.00001 0.0001 0.001 L - Inductive Load - H 6 SINGLE ...

Page 7

... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others ...

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