UPA2711GR NEC, UPA2711GR Datasheet

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UPA2711GR

Manufacturer Part Number
UPA2711GR
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC
Datasheet
1.UPA2711GR.pdf (7 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
UPA2711GR-E1
Quantity:
600
Document No. G15979EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Low C
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
• Low on-state resistance
Notes 1. PW ≤ 10
The
R
R
R
DS(on)1
DS(on)2
DS(on)3
µ
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
4. Starting T
µ
PA2711GR is P-Channel MOS Field Effect Transistor
iss
PA2711GR
= 9 mΩ MAX. (V
= 15 mΩ MAX. (V
= 20 mΩ MAX. (V
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
: C
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 2450 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
= 25°C, V
Note2
Note3
Note4
Note4
DS
GS
GS
GS
GS
= 0 V)
= −10 V, I
= 0 V)
= −4.5 V, I
= −4.0 V, I
DD
P-CHANNEL POWER MOS FET
= –15 V, R
Power SOP8
PACKAGE
D
= −6.5 A)
D
D
A
I
= −6.5 A)
= −6.5 A)
I
D(pulse)
V
V
D(DC)
T
E
P
P
T
= 25°C, Unless otherwise noted, All terminals are connected.)
I
GSS
DSS
AS
stg
AS
G
T1
T2
ch
DATA SHEET
= 25 Ω, L = 100
SWITCHING
–55 to + 150
2
x 2.2 mm
MOS FIELD EFFECT TRANSISTOR
16.9
–30
m20
m13
m52
150
−13
2
2
µ
H, V
GS
mJ
°C
°C
W
W
V
V
A
A
A
= –20 → 0 V
8
1
PACKAGE DRAWING (Unit: mm)
5.37 MAX.
µ
0.40
1.27
+0.10
–0.05
0.78 MAX.
PA2711GR
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
1, 2, 3
4
5, 6, 7, 8 : Drain
0.5 ±0.2
6.0 ±0.3
4.4
: Source
: Gate
Source
Drain
Body
Diode
0.8
0.10
2004

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UPA2711GR Summary of contents

Page 1

... The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15979EJ1V0DS00 (1st edition) ...

Page 2

... Starting T ch TEST CIRCUIT 3 GATE CHARGE D.U.T. = − Ω PG 25°C, Unless otherwise noted, All terminals are connected.) A SYMBOL TEST CONDITIONS − DSS GSS GS DS − ...

Page 3

ELECTRICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA -100 I D(pulse) R ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -60 −4 − −4.0 V -40 -30 -20 - -0.4 -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE − 4 − 4 − Pulsed I = − 100 T - ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD -100 I = − − −20 → Ω Starting T = 25°C ...

Page 7

... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • ...

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