UPA2754GR NEC, UPA2754GR Datasheet
UPA2754GR
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UPA2754GR Summary of contents
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... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...
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... GS BV DSS Starting T ch TEST CIRCUIT 3 GATE CHARGE D.U. PG 25°C, All terminals are connected.) A TEST CONDITIONS DSS ± GSS GS(off ...
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... Single pulse Mounted on ceramic substrate 2 of 2000 mm x 2.2 mm 0.01 0 Drain to Source Voltage - V DS TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 10 1 0.1 100 25°C, All terminals are connected.) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 2.4 2 units 2 1.6 1 unit 1.2 0.8 0.4 0 150 175 ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Pulsed 0.4 0.8 1 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2 V ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 2 3 100 T - Channel Temperature - °C ch SWITCHING CHARACTERISTICS 1000 V = ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 12 Starting T = 25°C ch 0.1 ...
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