UPA611TA NEC, UPA611TA Datasheet

no-image

UPA611TA

Manufacturer Part Number
UPA611TA
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
Manufacturer
NEC
Datasheet
1.UPA611TA.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
UPA611TA-T1
Quantity:
782
Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
2.5-V power source.
use as a high-speed switching device in digital circuits.
FEATURES
ORDERING INFORMATION
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW
The PA611TA is a switching device which can be driven directly by a
The PA611TA has excellent switching characteristics, and is suitable for
Can be driven by a 2.5-V power source
Low gate cut-off voltage
PART NUMBER
PA611TA
D11707EJ1V0DS00 (1st edition)
August 1999 NS CP(K)
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
10 s, Duty Cycle
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note
SC-74 (Mini Mold)
PACKAGE
1 %
FOR HIGH SPEED SWITCHING
A
= 25°C)
I
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
300
–55 to +150
±0.1
±0.4
MOS FIELD EFFECT TRANSISTOR
150
±20
(TOTAL)
30
mW
°C
°C
V
V
A
A
PACKAGE DRAWING (Unit : mm)
PIN CONNECTION (Top View)
Gate
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Marking : IB
6
1
0.95 0.95
2.9 ±0.2
PA611TA
0.32
(1/2 Circuit)
1.9
5
2
+0.1
–0.05
4
3
Source
©
Drain
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
Internal
Diode
1.1 to 1.4
0.8
0.16
0 to 0.1
1999
+0.1
–0.06

Related parts for UPA611TA

Image
Part Number
Description
Manufacturer
Datasheet
Request R
NEC B550
Part Number:
NEC B550
Description:
Manufacturer:
NEC
NEC B560
Part Number:
NEC B560
Description:
Manufacturer:
NEC
NEC B597
Part Number:
NEC B597
Description:
Manufacturer:
NEC
UPD70325L-8
Part Number:
UPD70325L-8
Description:
16/8 bit single-chip microcomputer
Manufacturer:
NEC
Datasheet:
UPD70325L-8.pdf (80 pages)
UPC1350C
Part Number:
UPC1350C
Description:
Manufacturer:
NEC
Datasheet:
UPC1350C.pdf (8 pages)
UPC1316C
Part Number:
UPC1316C
Description:
Dual audio power amp circuit
Manufacturer:
NEC
Datasheet:
UPC1316C.pdf (8 pages)
UPC393C
Part Number:
UPC393C
Description:
Dual comparator
Manufacturer:
NEC
Datasheet:
UPC393C.pdf (12 pages)
UPA572T
Part Number:
UPA572T
Description:
MOS type composite field effect transistor
Manufacturer:
NEC
Datasheet:
UPA572T.pdf (6 pages)
UPA672T
Part Number:
UPA672T
Description:
50 V/100 mA FET array incorporating 2 N-ch MOSFETs
Manufacturer:
NEC
Datasheet:
UPA672T.pdf (6 pages)
UPA802T
Part Number:
UPA802T
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
UPA802T.pdf (6 pages)
UPA803T
Part Number:
UPA803T
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
UPA803T.pdf (8 pages)
UPA805T
Part Number:
UPA805T
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
UPA805T.pdf (6 pages)
UPA807T
Part Number:
UPA807T
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
UPA807T.pdf (8 pages)
UPA836TF
Part Number:
UPA836TF
Description:
Twin transistors equipped with different model chips(6P small MM)
Manufacturer:
NEC
Datasheet:
UPA836TF.pdf (12 pages)
UPC1676G
Part Number:
UPC1676G
Description:
Bipolar analog integrated circuit
Manufacturer:
NEC
Datasheet:
UPC1676G.pdf (8 pages)

UPA611TA Summary of contents

Page 1

... Note Duty Cycle Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 2 = ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A TRANSFER CHARACTERISTICS 0.1 0.01 0.001 75˚C 25˚C ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 125 ˚ ˚C 25 ˚C 25 ˚ 0.0001 0.001 0. Drain Current - A D ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability / quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Data Sheet D11707EJ1V0DS00 PA611TA Document No. TEI-1202 C11531E C10535E MEI-1202 X10679E 5 ...

Page 6

Data Sheet D11707EJ1V0DS00 PA611TA ...

Page 7

Data Sheet D11707EJ1V0DS00 PA611TA 7 ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

Related keywords