MTD1N50E Motorola, MTD1N50E Datasheet

MTD1N50E

Manufacturer Part Number

MTD1N50E

Description

TMOS POWER FET 1.0 AMPERE 500 VOLTS

Manufacturer

Motorola

Datasheet

1.MTD1N50E.pdf (10 pages)

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Part Number:

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Manufacturer:

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Designer's

TMOS E-FET

Power Field Effect Transistor

DPAK for Surface Mount

N–Channel Enhancement–Mode Silicon Gate

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

MAXIMUM RATINGS

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

Drain–to–Source Voltage

Drain–to–Gate Voltage (R GS = 1.0 M )

Gate–to–Source Voltage — Continuous

Drain Current — Continuous

Total Power Dissipation @ T C = 25 C

Total Power Dissipation @ T A = 25 C, when mounted to minimum recommended pad size

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C

Thermal Resistance — Junction to Case

Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds

This high voltage MOSFET uses an advanced termination

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

I DSS and V DS(on) Specified at Elevated Temperature

Surface Mount Package Available in 16 mm, 13–inch/2500

Unit Tape & Reel, Add –T4 Suffix to Part Number

Derate above 25 C

(V DD = 100 Vdc, V GS = 10 Vdc, I L = 3.0 Apk, L = 10 mH, R G = 25 )

— Continuous @ 100 C

— Single Pulse (t p

— Junction to Ambient

— Junction to Ambient, when mounted to minimum recommended pad size

(T C = 25 C unless otherwise noted)

— Non–repetitive (t p

Data Sheet

10 s)

Rating

10 ms)

Symbol

T J , T stg

V GSM

V DGR

V DSS

R JC

R JA

V GS

E AS

I DM

P D

T L

I D

MTD1N50E

CASE 369A–13, Style 2

TMOS POWER FET

R DS(on) = 5.0 OHM

Motorola Preferred Device

– 55 to 150

1.0 AMPERE

500 VOLTS

Value

0.32

1.75

3.13

71.4

500

100

260

1.0

0.8

3.0

Order this document

DPAK

by MTD1N50E/D

Watts

W/ C

Unit

Vdc

Vpk

Adc

Apk

C/W

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