MTD5P06V Motorola, MTD5P06V Datasheet

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MTD5P06V

Manufacturer Part Number
MTD5P06V
Description
TMOS POWER FET
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS V
Power Field Effect Transistor
DPAK for Surface Mount
P–Channel Enhancement–Mode Silicon Gate
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
Features Common to TMOS V and TMOS E–FETS
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage
Drain Current — Continuous @ 25 C
Drain Current
Drain Current
Total Power Dissipation @ 25 C
Total Power Dissipation @ T A = 25 C (1)
Total Power Dissipation @ T A = 25 C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — STARTING T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 seconds
TMOS V is a new technology designed to achieve an on–resis-
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low R DS(on) Technology
Faster Switching than E–FET Predecessors
Avalanche Energy Specified
I DSS and V DS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS E–FET
Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel,
Add –T4 Suffix to Part Number
Derate above 25 C
Derate above 25 C
(V DD = 25 Vdc, V GS = 10 Vdc, PEAK I L = 5 Apk, L = 10 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
.
— Junction to Ambient
— Junction to Ambient (1)
(T C = 25 C unless otherwise noted)
— Non–repetitive (t p
Data Sheet
10 s)
www.DataSheet4U.com
Rating
10 ms)
G
D
S
TM
Symbol
T J , T stg
V GSM
V DGR
V DSS
R JC
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTD5P06V
R DS(on) = 0.450 OHM
CASE 369A–13, Style 2
TMOS POWER FET
DPAK Surface Mount
Motorola Preferred Device
– 55 to 175
5 AMPERES
60 VOLTS
Value
0.27
0.27
3.75
71.4
125
100
260
2.1
2.1
Order this document
60
60
18
40
5
4
15
25
by MTD5P06V/D
Watts
Watts
Watts
W/ C
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTD5P06V Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 D G Rating 10 ms) Order this document by MTD5P06V/D MTD5P06V Motorola Preferred Device TMOS POWER FET 5 AMPERES 60 VOLTS R DS(on) = 0.450 OHM TM CASE 369A–13, Style 2 ...

Page 2

... MTD5P06V ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 150 C) Gate–Body Leakage Current ( ...

Page 3

... Figure 4. On–Resistance versus Drain Current 100 125 150 175 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTD5P06V – 100 ...

Page 4

... MTD5P06V Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTD5P06V d(off d(on) 10 ...

Page 6

... MTD5P06V 100 SINGLE PULSE 100 DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 Figure 14. Diode Reverse Recovery Waveform 6 SAFE OPERATING AREA ...

Page 7

... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTD5P06V Board Material = 0.0625 G–10/FR– Copper 5.0 Watts ...

Page 8

... MTD5P06V Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 17. Typical Solder Heating Profile MTD5P06V STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 ––– 0.51 ––– V 0.030 0.050 0.77 1.27 Z 0.138 ––– 3.51 ––– MTD5P06V/D ...

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