MTP6N60 ST Microelectronics, MTP6N60 Datasheet

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MTP6N60

Manufacturer Part Number
MTP6N60
Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Manufacturer
ST Microelectronics
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
MTP6N60
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
V
D M
V
V
T
P
DG R
I
I
T
D S
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
600 V
V
= 1
DSS
Parameter
< 1.2
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
6.8 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
TO-220
600
600
125
150
6.8
4.2
30
1
20
MTP6N60
1
2
3
W/
Unit
o
o
W
V
A
V
V
A
A
C
C
o
C
1/9

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MTP6N60 Summary of contents

Page 1

... T Max. Operating Junction Temperature Pulse width limited by safe operating area November 1996 POWER MOS TRANSISTOR INTERNAL SCHEMATIC DIAGRAM = 100 MTP6N60 TO-220 Value Unit 600 V 600 6 125 ...

Page 2

... MTP6N60 THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink thj- amb T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy ...

Page 3

... GS (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) Thermal Impedance MTP6N60 Min. Typ. Max. Unit 140 175 ns 240 Min. Typ. Max. Unit ...

Page 4

... MTP6N60 Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/9 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...

Page 5

... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time MTP6N60 5/9 ...

Page 6

... MTP6N60 Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/9 Accidental Overload Area Fig. 2: Unclamped Inductive Waveforms ...

Page 7

... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge Test Circuit MTP6N60 7/9 ...

Page 8

... MTP6N60 ISOWATT220 MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 Ø 8/9 mm MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. MAX. 0.181 0.106 ...

Page 9

... SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . MTP6N60 9/9 ...

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