RFP2N20L Intersil Corporation, RFP2N20L Datasheet
RFP2N20L
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RFP2N20L Summary of contents
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... Data Sheet 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through ...
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... 0V 25V 1MHz ISS GS DS (Figure 9) C OSS C RSS R JC SYMBOL TEST CONDITIONS 2A, dl /dt = 50A RFP2N20L 200 DSS 200 DGR 0 -55 to 150 J STG 300 L 260 pkg MIN TYP 200 - ...
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... FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 15V 125 C - GATE TO SOURCE VOLTAGE (V) GS FIGURE 5. TRANSFER CHARACTERISTICS 6-258 RFP2N20L Unless Otherwise Specified 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 125 150 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT MAX RATED ...
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... V DRAIN TO SOURCE VOLTAGE (V) DS, FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms FIGURE 11. SWITCHING TIME TEST CIRCUIT 6-259 RFP2N20L Unless Otherwise Specified (Continued) 100 150 o C) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs 200 C ISS 150 + C GD 100 ...
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... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 6-260 RFP2N20L EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd ...