RFP2N20L Intersil Corporation, RFP2N20L Datasheet - Page 2

• Manufacturer Part Number: RFP2N20L
• Description: 2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
1. T
2. Pulsed: pulse duration = 300 s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Linearly Above T
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
= 25
o
C to 125
PARAMETER
PARAMETER
o
C.
GS
C
= 20K (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
6-257
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
BV
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
V
r
t
DS(ON)
t
d(OFF)
C
DS(ON)
C
DSS
GS(TH)
R
I
d(ON)
C
I
V
DSS
GSS
OSS
RSS
t
ISS
t
t
SD
rr
r
f
JC
I
V
V
V
T
V
I
I
I
R
V
(Figure 9)
I
I
D
D
D
D
SD
SD
C
GS
DS
DS
GS
GS
L
= 250 A, V
= 2A, V
= 2A, V
= 2A, V
RFP2N20L
= 50 (Figures 10, 11, 12)
= 125
= 2A
= 2A, dl
= Rated BV
= 0.8 x Rated BV
= V
= 10V, V
= 0V, V
DS
o
DD
C
GS
GS
, I
SD
DS
D
= 5V
= 5V (Figures 6, 7)
= 100V, R
GS
TEST CONDITIONS
TEST CONDITIONS
/dt = 50A/ s
DS
= 250 A
= 25V, f = 1MHz
DSS
= 0V
= 0
, V
DSS
GS
G
J
= 6.25 , V
, V
, T
= 0V
GS
DGR
DSS
STG
pkg
DM
GS
D
D
L
= 0V,
GS
= 5V
RFP2N20L
-55 to 150
200
200
300
260
0.2
MIN
25
MIN
200
10
2
4
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
TYP
200
10
10
25
20
-
-
-
-
-
-
-
-
-
-
-
-
3.500
MAX
MAX
200
1.4
25
100
25
30
40
25
60
35
2
1
7
5
-
-
UNITS
W/
o
o
o
W
V
V
V
A
A
C
C
C
o
C
UNITS
UNITS
o
C/W
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
A
A