MCP1754 Microchip Technology Inc., MCP1754 Datasheet - Page 6

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MCP1754

Manufacturer Part Number
MCP1754
Description
150 Ma, 16v, High Performance Ldo
Manufacturer
Microchip Technology Inc.
Datasheet

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MCP1754/MCP1754S
DS22276A-page 6
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V
1 µF (X7R), C
Boldface type applies for junction temperatures, T
Output Voltage Regulation
V
Coefficient
Line Regulation
Load Regulation
Dropout Voltage
Dropout Current
Undervoltage Lockout
Undervoltage Lockout
Undervoltage Lockout
Hysterisis
Shutdown Input
Logic High Input
Logic Low Input
Shutdown Input Leakage
Current
Power Good Output
PWRGD Input Voltage
Operating Range
PWRGD Threshold Volt-
age (Referenced to V
PWRGD Threshold
Hysteresis
PWRGD Output Voltage
Low
PWRGD Output Sink
Current
PWRGD Leakage Current
Note 1:
OUT
Temperature
2:
3:
4:
5:
6:
7:
Parameters
The minimum V
V
ever is greater); I
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal V
measured value. The nominal VR measured value is obtained with
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
R
IN
is the nominal regulator output voltage when the input voltage V
= 1 µF (X7R), T
OUT
(Note
= (V
OUT
OUT-HIGH
5)
IN
)
OUT
must meet two conditions: V
A
V
(V
ΔV
V
V
V
V
OUT-LOW
= 25°C, t
= 1 mA.
I
V
V
PWRGD_HYS
UVLO
PWRGD_VIN
I
PWRGD_LK
SHDN
- V
PWRGD_TH
OUT
SHDN-HIGH
TCV
SHDN-LOW
PWRGD_L
ΔV
DROPOUT
PWRGD_L
OUT
UVLO
V
Sym
OUT-LOW
I
OUT
DO
OUT
XΔV
OUT
/V
HYS
ILK
r(VIN)
= lowest voltage measured over the temperature range.
OUT
/
IN
) *10
)
= 0.5V/µs, SHDN = V
J
6
2.0%
-0.05
(Note
Min
-1.1
V
2.4
0.0
1.7
5.0
/ (V
90
R
-
R
* ΔTemperature), V
7) of -40°C to +125°C.
IN
V
±0.01
0.100
0.500
≥ 3.6V and V
2.95
Typ
-0.4
300
285
2%
2.0
0.2
R
22
50
92
40
±0.
IN
V
V
, PWRGD = 10K to V
+0.05
IN(MAX)
0.500
Max
R
500
700
V
0.8
2.0
0.6
85
94
%
+2.0
0
IN
IN
≥ V
OUT-HIGH
A
, T
IN
R
J
= V
, θ
+ V
ppm/°C
%V
%V
JA
Units
IN
Rated
%/V
mV
mV
mA
DROPOUT(MAX)
µA
µA
nA
%
). Exceeding the maximum allowable power
V
V
V
V
V
V
= highest voltage measured over the
= V
OUT
OUT
+ V
R
+ 1V,
OUT
DROPOUT(MAX)
Note 2
Note 3
V
I
I
V
Rising V
Falling V
SHDN = GND
SHDN = 16V
I
Falling Edge of V
Rising Edge of V
I
V
V
V
V
L
L
SINK
PWRGD_SINK
.
R
IN
OUT
PWRGD
PWRGD
IN
© 2011 Microchip Technology Inc.
= 1.0 mA to 150 mA,
= 150 mA
Note
+ 1V ≤ V
= 0.95V
= 16V
.
OUT
= 1 mA
= 0V
1, I
.
IN
IN
Pullup = 10 KΩ to V
≤ 0.4V
Conditions
LOAD
R
or Vi
IN
, I
= 5.0 mA,
OUT
= 1 mA, C
≤ 16V
IN
OUT
OUT
= 3.6V (which-
= 0 mA
Note 4
OUT
IN,
=
R

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