MTB36N06E Motorola, MTB36N06E Datasheet - Page 3

• Manufacturer Part Number: MTB36N06E
• Description: TMOS POWER FET 36 AMPERES 60 VOLTS
• Manufacturer: Motorola

Motorola TMOS Power MOSFET Transistor Device Data
0.8
0.6
0.4
0.2
2.2
1.4
0.6
1.8
80
60
40
20
0
0
1
–50
0
0
Figure 3. On–Resistance versus Drain Current
T J = 25 C
V GS = 10 V
V GS = 10 V
I D = 18 A
–25
Figure 5. On–Resistance Variation with
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
T J = 100 C
10
2
0
10 V
T J , JUNCTION TEMPERATURE ( C)
– 55 C
25 C
I D , DRAIN CURRENT (AMPS)
25
and Temperature
9 V
Temperature
20
4
8 V
7 V
6 V
5 V
50
75
TYPICAL ELECTRICAL CHARACTERISTICS
V GS = 4 V
30
6
100
125
40
8
150
175
50
10
1000
400
200
100
80
60
40
20
40
38
36
34
32
30
28
26
24
22
20
0
15
0
0
Figure 4. On–Resistance versus Drain Current
T J = 125 C
V GS = 0 V
T J = 25 C
V DS 10 V
20
10
100 C
25 C
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
2
25
20
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
V GS = 10 V
30
and Gate Voltage
15 V
30
4
35
40
T J = – 55 C
40
6
50
45
MTB36N06E
60
50
25 C
8
70
55
100 C
3
60
10
80