LM3434SQX National Semiconductor Corporation, LM3434SQX Datasheet - Page 4

• Manufacturer Part Number: LM3434SQX
• Description: Lm3434 Common Anode Capable High Brightness Led Driver With High Frequency Dimming
• Manufacturer: National Semiconductor Corporation

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SUPPLY CURRENT
I
I
OUTPUT CURRENT CONTROL
V
G
I
I
Gm
ON TIME CONTROL
T
GATE DRIVE AND INTERNAL REGULATOR
V
V
R
R
R
R
R
R
IN
IN
CSN
CSP
ONTH
CS
CCOUT
CCILIM
OLH
OHH
OLL
OHL
OLP
OHP
ADJ
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Specifications in standard type face are for T
Range ( T
values represent the most likely parametric norm at T
stated the following conditions apply: V
V
V
Symbol
V
COMP, SS to V
BST to HS
V
CGND, DIMR, CSP, CSN,
T
HS to V
LS to V
HO output
DIMO to DIMR
LO output
EE
IN
ON
IN
CC
, EN, DIM, ADJ to CGND
to V
to V
EE
EE
EE
EE
J
= −40°C to +125°C). Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical
(Note
V
V
Current sense target voltage;
V
I
(V
Isense Input Current
Isense Input Current
CS to COMP
Transconductance; Gm =
I
16.67)
On time threshold
V
V
HO output low resistance
HO output high resistance
LO output low resistance
LO output high resistance
DIMO output low resistance
DIMO output high resistance
ADJ
COMP
EE
IN
CS
CC
CC
CNP
Quiescent Current
Quiescent Current
Gain = (V
= V
output regulation w.r.t. V
current limit
EE
2)
-V
/ (V
CSP
CSN
CSP
Parameter
)
– V
– V
ADJ
CSN
-CGND)/
CSN
- V
ADJ
HS-0.3V to BST+0.3V
LS-0.3V to V
EE
/
EE
= -12.0V and V
EN = CGND
EN = V
EN = V
EN = CGND
V
V
w.r.t. CGND
V
V
V
V
V
event
I
V
I = 50mA source
I = 50mA sink
I = 50mA source
I = 50mA sink
I = 5mA source
I = 5mA sink
-0.3V to +7.5V
-0.3V to +0.3V
J
CC
-0.3V to +33V
-0.3V to +33V
ADJ
IN
ADJ
ADJ
ADJ
ADJ
T
CC
= 25°C and those with boldface type apply over the full Operating Temperature
-0.3V to +7V
-0.3V to +7V
-0.3V to +7V
-0.3V to +7V
ON
(Note
= 3.3V, V
= 0mA to 20mA
= V
- V
= V
= 1V w.r.t. CGND
= V
= V
= 1V w.r.t. CGND
CC
IN
IN
EE
EE
IN
IN
IN
, Not Switching
, Not Switching
+0.3V
J
Conditions
1)
at terminate ON time
= +25ºC, and are provided for reference purposes only. Unless otherwise
IN
ADJ
= +3.3V with respect to CGND.
= 0.5V or 1.5V
4
Operating Conditions
BST2 to V
Maximum Junction
Temperature
Power
ESD Susceptibility
(Note
Operating Junction
Temperature Range
Storage Temperature
Input Voltage V
Input Voltage V
ADJ Input Voltage Range to
CGND
Human Body Model
4)
Dissipation(Note
Min
EE
230
(Note
0.6
6.3
57
15
IN
EE
w.r.t. CGND
5) Typ
w.r.t. CGND
(Note
3)
16.67
-110
6.75
142
450
287
(Note
-50
1.0
1.3
35
60
10
60
20
30
5)
1
2
3
2
3
6)
Max
Internally Limited
−40°C to +125°C
−65°C to +150°C
250
334
(Note
2.2
7.1
71
63
18
-0.3V to 40V
3.0V to 5.8V
-9V to -30V
5)
0V to V
150°C
2kV
Units
V/V
mA
mV
mS
mV
mA
µA
µA
µA
µA
Ω
Ω
Ω
V
IN