BLF2022-30 Philips Semiconductors, BLF2022-30 Datasheet - Page 5

• Manufacturer Part Number: BLF2022-30
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
2003 Feb 24
handbook, halfpage
UHF power LDMOS transistor
Two-carrier W-CDMA performance.
V
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Fig.6
DS
(dB)
G p
= 28 V; I
15
10
5
0
0
Power gain and drain efficiency as functions
of average load power; typical values.
DQ
= 270 mA; T
2
G p
4
h
D
25 C; f
6
1
= 2170 MHz.
P L (AV) (W)
8
MLD940
10
30
20
10
0
(%)
D
5
handbook, halfpage
Two-carrier W-CDMA performance.
V
f
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Fig.7
1
DS
(dBc)
= 2165 MHz;.
d im
= 28 V; I
20
40
60
0
0
Intermodulation distortion and adjacent
channel leakage ratio (ACLR) as functions
of average load power; typical values.
DQ
= 270 mA; T
2
4
h
25 C; f
d im
6
1
= 2155 MHz;
ACLR
BLF2022-30
Product specification
P L (AV) (W)
8
MLD941
10
0
ACLR
(dBc)
20
40
60