3SK224 NEC, 3SK224 Datasheet - Page 3

• Manufacturer Part Number: 3SK224
• Description: RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
• Manufacturer: NEC

TYPICAL CHARACTERISTICS (T
400
300
200
100
25
20
15
10
40
32
24
16
–0.5
0
5
0
8
0
V
V
f = 1 kHz
DS
DS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
= 6 V
= 6 V
V
0.5 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
G1S
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
T
25
0
4
A
– Ambient Temperature – °C
– Gate1 to Source Voltage – V
I
D
– Drain Current – mA
0.5
50
8
V
G2S
1.0 V
= 3.0 V
2.5 V
1.0
75
12
V
2.0 V
100
1.5
G2S
16
A
1.5 V
1.0 V
0.5 V
= 3.0 V
= 25 C)
1.5 V
2.0 V
2.5 V
125
2.0
20
5.0
4.0
3.0
2.0
1.0
25
20
15
10
40
32
24
16
5
0
8
0
–0.5
0
–1.0
V
V
f = 1 kHz
I
(at V
f = 1 MHz
G2S
DS
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
D
V
= 10 mA
= 6 V
G2S
= 3 V
V
DS
V
V
G1S
G2S
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
= 3 V)
DS
= 6 V
3
0
0
– Drain to Source Voltage – V
– Gate1 to Source Voltage – V
– Gate2 to Source Voltage – V
0.5
1.0
6
V
G1S
0.5 V
1.0
2.0
9
= 1.4 V
1.2 V
1.0 V
0.8 V
0.6 V
0.4 V
0.2 V
V
1.0 V
G2S
1.5
3.0
12
= 3.0 V
1.5 V
3SK224
2.0 V
2.5 V
2.0
4.0
15
3