3SK253 NEC, 3SK253 Datasheet

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3SK253

Manufacturer Part Number
3SK253
Description
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
FEATURES
• Low V
• Driving Battery
• Low Noise Figure :
• High Power Gain :
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting :
• Package
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
PRECAUTION:
fields.
*1: R
*2: Free air
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
L
DD
Use
10 k
:
(V
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
DS
:
= 18.0 dB TYP. (f = 900 MHz)
= 3.5 V)
Embossed Type Taping
4 Pins Mini Mold
RF AMPLIFIER FOR UHF TUNER
V
V
V
V
V
T
T
P
DSX
G1D
G2D
I
G1S
G2S
stg
D
ch
D
–55 to +125
DATA SHEET
4 PINS MINI MOLD
A
200
125
18
18
18
25
8
8
= 25 C)
*1
*1
*2
MOS FIELD EFFECT TRANSISTOR
mW
mA
V
V
V
V
V
C
C
PACKAGE DIMENSIONS
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
(Unit: mm)
2.8
1.5
3SK253
+0.2
–0.3
+0.2
–0.1
©
1993

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3SK253 Summary of contents

Page 1

... DSX * G1S * G2S G1D G2D 200 125 –55 to +125 C stg 3SK253 PACKAGE DIMENSIONS (Unit: mm) +0.2 2.8 –0.3 +0.2 1.5 –0.1 5° 5° 5° 5° PIN CONNECTIONS 1. Source 2. Drain 3. Gate2 4. Gate1 © 1993 ...

Page 2

... V DS 0.5 1.0 1 MHz 0.01 0. 900 MHz 1.8 3.0 dB 3SK253 TEST CONDITIONS = V = – G2S 0.75 V G2S G1S = 3 G2S G1S G2S G1S = ...

Page 3

... V G1S INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 3.0 V) G2S 4 MHz = 3.5 V 3.0 3.0 V 2.0 2 –1 G2S 3SK253 V = 1.2 V G1S 1.0 V 0.8 V 0.6 V 0 – Drain to Source Voltage – 3.5 V G2S 2.0 V 3.0 V 1.5 V 2.5 V 1.0 V 0.5 1.0 1.5 2.0 – Gate1 to Source Voltage – V 1.0 2.0 3.0 4.0 – Gate2 to Source Voltage – V ...

Page 4

... ( 3 3.0 V) G2S f = 900 MHz –10 –20 0 4.0 –1 – Gate2 to Source Voltage – V G2S V G2S 1 000 000 OUTPUT L 2 RFC 1 000 G1S DD 3SK253 1.0 2.0 3.0 4 0.2 mm ...

Page 5

... [MEMO] 3SK253 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 3SK253 M4 94.11 ...

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