3SK255 NEC, 3SK255 Datasheet - Page 3

• Manufacturer Part Number: 3SK255
• Description: RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
• Manufacturer: NEC

TYPICAL CHARACTERISTICS (T
200
100
25
20
15
10
40
32
24
16
0
5
0
8
0
V
V
f = 1 kHz
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DS
DS
1.0 V
= 3.5 V
= 3.5 V
V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
G1S
T
0.5
25
A
130 mW
V
– Ambient Temperature – °C
– Gate1 to Source Voltage – V
G2S
I
D
– Drain Current – mA
= 3.5 V
1.5 V
1.0
50
10
1.5
75
3.0 V
V
2.0 V
G2S
100
2.0
A
= 3.5 V
= 25 ˚C)
3.0 V
2.5 V
2.5 V
2.0 V
1.5 V
1.0 V
125
2.5
20
5.0
4.0
3.0
2.0
1.0
25
20
15
10
40
32
24
16
5
0
8
0
–0.5
0
–1.0
V
V
f = 1 kHz
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
I
(at V
f = 1 MHz
G2S
D
DS
= 7 mA
V
= 3.5 V
V
V
= 3.0 V
G2S
V
DS
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
G1S
G2S
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
0
0
= 3.5 V,
= 3.0 V)
– Drain to Source Voltage – V
– Gate1 to Source Voltage – V
– Gate2 to Source Voltage – V
0.5
1.0
1.0 V
5
1.5 V
V
G1S
1.0
2.0
2.0 V
= 1.2 V
V
G2S
3SK255
1.5
3.0
1.0 V
0.8 V
0.6 V
0.4 V
0.2 V
2.5 V
= 3.5 V
3.0 V
2.0
4.0
10
3