NE650R279A NEC, NE650R279A Datasheet

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NE650R279A

Manufacturer Part Number
NE650R279A
Description
0.2 W L / S-BAND POWER GaAs MES FET
Manufacturer
NEC
Datasheet
Document No. P13678EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
DESCRIPTION
communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high
linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
FEATURES
• High Output Power
• High Linear Gain
• High Power Added Efficiency: 45% typ. @V
ORDERING INFORMATION (PLAN)
ABSOLUTE MAXIMUM RATINGS (T
NE650R279A-T1
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
Remark
Operation in excess of any one of these parameters may result in permanent damage.
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
Part Number
Parameter
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE650R279A)
device.
79A
0.2 W L, S-BAND POWER GaAs MES FET
The information in this document is subject to change without notice.
Package
PRELIMINARY DATA SHEET
: P
: 16 dB typ.
Symbol
V
V
T
I
I
T
P
GSO
I
GF
GR
DS
stg
O (1 dB)
D
ch
T
= +23 dBm typ.
A
= 25°C)
12 mm tape width, 1 kpcs/reel
DS
= 6 V, I
–65 to +150
Ratings
Supplying Form
150
0.3
2.1
15
–7
8
8
Dset
= 50 mA, f = 1.9 GHz
N-CHANNEL GaAs MES FET
Unit
NE650R279A
mA
mA
°C
°C
W
V
V
A
©
1998

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NE650R279A Summary of contents

Page 1

... W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. ...

Page 2

... Channel to Case f = 1.9 GHz 6 (RF OFF) Dset Note 2 Preliminary Data Sheet NE650R279A MIN. TYP. MAX. Unit 6.0 6.0 V 3.0 dB +125 °C MIN. TYP. MAX. Unit 150 mA –2.5 –0 °C/W 23 ...

Page 3

... NE650R279A S-PARAMETERS TEST CONDITIONS freq. (MHz) MAG. ANG. (deg.) 1400 0.865 –103.4 1500 0.861 –108.0 1600 0.850 –112.1 1700 0.839 –116.0 1800 0.833 –120.5 1900 0.827 –124.9 2000 0.817 –129.4 2100 0.809 –133.1 2200 0.806 –137.7 2300 0.795 –143.0 2400 0.789 – ...

Page 4

... VDS = (RF OFF) Dset 4 VGS VDS Rg 1000 p /4 LINE 7 5 Preliminary Data Sheet NE650R279A Tantalum Condenser 100 F /4 OPEN STUB OUTPUT 50 LINE GND Substrate: Teflon glass ( 0.8 mm ...

Page 5

... Package Dimensions (Unit: mm) 4.2 max. Source Gate 0.4 0.15 5.7 max. 79A Package Recommended P.C.B. Layout (Unit: mm) Drain Source 1.5 0.2 Gate Drain Bottom View 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. Gate through hole 0.2 0.5 0.5 6.1 Preliminary Data Sheet NE650R279A Source Drain 0.8 max. 3.6 0 ...

Page 6

... Note After opening the dry pack, keep place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). 6 Soldering Conditions Note : None Note : None Preliminary Data Sheet NE650R279A For soldering methods and Recommended Condition Symbol IR35-00-2 – ...

Page 7

... Preliminary Data Sheet NE650R279A 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. Caution NE650R279A M4 96. 5 ...

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