NE6510179 NEC, NE6510179 Datasheet

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NE6510179

Manufacturer Part Number
NE6510179
Description
1 W L-BAND POWER GaAs HJ-FET
Manufacturer
NEC
Datasheet

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Document No. P13496EJ4V0DS00 (4th edition)
Date Published August 2000 N CP(K)
Printed in Japan
DESCRIPTION
communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear
gain, high efficiency and excellent distortion.
FEATURES
• GaAs HJ-FET structure
• High output power
• High linear gain
• High power added efficiency : 70% TYP. @V
ORDERING INFORMATION
NE6510179A-T1
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
Remark
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
Part Number
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE6510179A).
device.
1 W L-BAND POWER GaAs HJ-FET
Package
79A
: P
: G
P
P
G
G
58% TYP. @V
56% TYP. @V
out
out
out
L
L
L
= 15 dB TYP. @V
= 10 dB TYP. @V
= 10 dB TYP. @V
= +31.5 dBm TYP. @V
= +32.5 dBm TYP. @V
= +35.0 dBm TYP. @V
The mark
DATA SHEET
12 mm wide embossed taping
Qty 1 kpcs/reel
DS
DS
DS
shows major revised points.
= 3.5 V, I
= 3.5 V, I
= 5.0 V, I
DS
DS
DS
Supplying Form
= 3.5 V, I
= 3.5 V, I
= 5.0 V, I
Dset
Dset
Dset
DS
DS
DS
= 3.5 V, I
= 3.5 V, I
= 5.0 V, I
= 200 mA, f = 900 MHz, P
= 200 mA, f = 1 900 MHz, P
= 200 mA, f = 1 900 MHz, P
Dset
Dset
Dset
N-CHANNEL GaAs HJ-FET
= 200 mA, f = 900 MHz, P
= 200 mA, f = 1 900 MHz, P
= 200 mA, f = 1 900 MHz, P
Dset
Dset
Dset
NE6510179A
= 200 mA, f = 900 MHz, P
= 200 mA, f = 1 900 MHz, P
= 200 mA, f = 1 900 MHz, P
in
= +20 dBm
in
in
= +25 dBm
= +25 dBm
in
= 0 dBm
in
in
= 0 dBm
= 0 dBm
©
in
= +20 dBm
in
in
= +25 dBm
= +25 dBm
1998, 2000

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NE6510179 Summary of contents

Page 1

... W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems capable of delivering output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. ...

Page 2

... 2 Channel to Case f = 1.9 GHz 3 +25 dBm 100 , 200 mA (RF OFF) Dset Note 2 Data Sheet P13496EJ4V0DS00 NE6510179A MIN. TYP. MAX. Unit 3.5 5.5 V Note 5.0 dB +110 °C MIN. TYP. MAX. Unit 2.4 A –2.0 –0 °C/W 31 ...

Page 3

... Dset Test Conditions f = 1.9 GHz 5 +25 dBm 100 , 200 mA (RF OFF) Dset = + out Input Power P (dBm) in Data Sheet P13496EJ4V0DS00 NE6510179A MIN. TYP. MAX. Unit 31.5 dBm 0. 15.0 dB MIN. TYP. MAX. Unit 35.0 dBm 1 10 500 6 1 000 ...

Page 4

... Data Sheet P13496EJ4V0DS00 NE6510179A S 22 MAG. ANG. (deg.) 0.803 177.2 0.808 177.2 0.806 176.5 0.807 176.3 0.802 175.3 0.796 175.5 0.802 173.7 0.804 174.5 0.808 173.7 0.807 173.5 0.806 172 ...

Page 5

... 1.5 2 100 Data Sheet P13496EJ4V0DS00 NE6510179A Tantalum Condenser 100 OUTPUT 5 GND Substrate: Teflon glass ( 0.8 mm Tantalum Condenser 100 F 50 LINE OUTPUT C2 2 GND Substrate: Teflon glass ( ...

Page 6

... PACKAGE DIMENSIONS (Unit: mm) 4.2 MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (Unit: mm) Drain Source 6 BOTTOM VIEW 1.5±0.2 Drain Gate 3.6±0.2 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. Gate through hole 0.2 0.5 0.5 6.1 Data Sheet P13496EJ4V0DS00 NE6510179A Source Drain 0.8 MAX. 33 ...

Page 7

... Note After opening the dry pack, store it at 25°C or less and 65 less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). Soldering Conditions Note Note Data Sheet P13496EJ4V0DS00 NE6510179A For soldering Recommended Condition Symbol IR35-00-2 – 7 ...

Page 8

... NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). CAUTION NE6510179A Not all The M8E 00. 4 ...

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