NE67383 NEC, NE67383 Datasheet - Page 3

• Manufacturer Part Number: NE67383
• Description: (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
• Manufacturer: NEC

TYPICAL COMMON SOURCE SCATTERING PARAMETERS
Note:
1. Gain Calculation:
OUTLINE DIMENSIONS
V
DS
FREQ
(GHz)
400
10.0
12.0
14.0
16.0
18.0
2.0
4.0
6.0
8.0
= 3 V, I
312
MAG =
53
88
44
DS
= 10 mA
Bonding Pad Area.
|S
|S
21
12
MAG
|
|
.95
.89
.82
.78
.73
.71
.71
.67
.66
49
(
K ±
S
11
SOURCE
GATE
NE67300 (Chip)
DRAIN
42
56
ANG
-102
-114
-122
-128
-140
K - 1
(Units in m)
-26
-50
-70
-88
2
230
450
84
98
(Units in mm)
)
Chip Thickness: 140 m
. When K
SOURCE
DRAIN
GATE
56
42
MAG
3.79
3.26
2.83
2.55
2.21
2.16
2.11
1.92
1.81
49
S
GLASSIVATION LAYER
1, MAG = MSG. MSG =
21
ANG
161
141
126
114
104
93
90
76
63
(V
Coordinates in Ohms
DS
Frequency in GHz
MAG
= 3 V, I
.04
.06
.08
.09
.10
.10
.11
.11
.11
NE67300
DS
S
12
= 10 mA)
|S
|S
ANG
79
66
56
51
48
43
44
43
40
21
12
|
|
, K = 1 + |
0.1
D
MAG
.59
.58
.54
.50
.47
.45
.47
.49
.52
(T
+0.06
-0.03
A
2 |S
PACKAGE OUTLINE 83
= 25 C)
| - |S
S
2
22
12
ANG
-13
-24
-33
-42
-48
-55
-62
-64
-70
S
11
21
| - |S
2
|
S
S
22
0.20
0.35
0.51
0.59
0.75
0.84
0.70
0.88
0.90
|
2
1.02 ± 0.05
K
4.0 MIN (ALL LEADS)
1.8 ± 0.2
,
= S
(dB)
11.6
10.3
S
11
G
9.0
8.1
6.9
6.7
6.5
5.7
5.1
21
S
22
0.51 ± 0.05
- S
1.6 MAX
MAG
21
(dB)
19.8
14.5
13.3
12.4
17.3
15.5
13.4
12.8
12.2
S
1
12