NE680 NEC, NE680 Datasheet - Page 16

• Manufacturer Part Number: NE680
• Description: NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
• Manufacturer: NEC

BJT NONLINEAR MODEL PARAMETERS
SCHEMATIC
NE68035 NONLINEAR MODEL
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
0.358e-12
0.162e-12
3.84e-16
1.0e-14
4.01e-4
Infinity
Infinity
124.9
0.027
1.05
2.17
1.05
17.9
1.02
10.5
0.71
0.79
11.9
BASE
0.6
0.5
Q1
1
0
2
Parameters
CBEX_PKG
0.1 ohms
XCJC
RB_PKG
MJC
MJS
XTB
0.1pF
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TR
KF
TF
AF
LB_PKG
0.15nH
0.635e-9
8.7e-12
0.082
CBE_PKG
0.05pF
0.64
0.75
19.1
1.11
Q1
0.5
18
0
0
0
0
0
3
0
1
0.45nH
LB
0.07pF
CCB
CCB_PKG
0.11pF
(1)
68100
RE_PKG
0.1 ohms
LE_PKG
0.38nH
EMITTER
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
CCE
0.01pF
0.96nH
LC
time
capacitance
inductance
resistance
voltage
current
Parameter
0.05 to 5.0 GHz
V
10/31/96
CE
0.15nH
LC_PKG
CCE_PKG
0.2pF
Q1
= 6 V, I
CCEX_PKG
0.2pF
C
0.1 ohms
RC_PKG
= 5 mA to 20 mA
seconds
farads
henries
ohms
volts
amps
Units
COLLECTOR