2SA1010 NEC, 2SA1010 Datasheet

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2SA1010

Manufacturer Part Number
2SA1010
Description
SILICON POWER TRANSISTOR
Manufacturer
NEC
Datasheet
1.2SA1010.pdf (6 pages)

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SA1010
Manufacturer:
NEC
Quantity:
5 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SA1010
Manufacturer:
SANYO
Quantity:
20 000
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
* PW ≤ 300 µ s, duty cycle ≤ 10%
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
The 2SA1010 is a mold power transistor developed for high-
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
P
P
PNP SILICON EPITAXIAL TRANSISTOR
T
T
(Tc = 25 °C)
(Ta = 25 °C)
Symbol
I
C(pulse)
V
V
V
I
I
C(DC)
B(DC)
T
CBO
CEO
EBO
T
stg
j
*
−55 to +150
Ratings
DATA SHEET
−100
−100
−7.0
−7.0
−3.5
−15
150
1.5
40
Unit
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
Pin Connection
2SA1010
©
2002

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2SA1010 Summary of contents

Page 1

... PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high- frequency power amplifiers. FEATURES • Low collector saturation voltage • ...

Page 2

... −0 −5 −0 −5 Ω −I = −0 ≅ − 100 to 200 Collector to Emitter Voltage V Data Sheet D16118EJ2V0DS 2SA1010 MIN. TYP. MAX. Unit −100 V −100 V −100 V µ A −10 −1.0 mA −10 µ A −1.0 mA −10 µ ...

Page 3

... C) Case Temperature T C Collector to Emitter Voltage V (V) CE Collector Current I (A) C Data Sheet D16118EJ2V0DS 2SA1010 Pulse Width PW (ms) Collector to Emitter Voltage V (V) CE Collector Current I ( ...

Page 4

... Collector Current I 4 (A) C Base current waveform Collector current waveform Data Sheet D16118EJ2V0DS 2SA1010 ...

Page 5

... Data Sheet D16118EJ2V0DS 2SA1010 5 ...

Page 6

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SA1010 The M8E 00. 4 ...

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