2SA1988 NEC, 2SA1988 Datasheet

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2SA1988

Manufacturer Part Number
2SA1988
Description
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE
Manufacturer
NEC
Datasheet
1.2SA1988.pdf (4 pages)
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
DESCRIPTION
designed for audio frequency power amplifier.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Gain Band width Product
Output Capacitance
High Voltage V
DC Current Gain h
TO-3P Package
The 2SA1988 is PNP Silicon Power Transistor that
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipantion
JunctionTemperature
Storage Tempreature
CHARACTERISTIC
*1 PW
Type Number
2SA1988
Pulse Test PW
300 s, Duty Cycle
CEO
FE
= 200 V
= 70 to 200
Package
350 s, Duty Cycle
MP-88
The information in this document is subject to change without notice.
SYMBOL
V
V
h
h
I
I
CE (sat)
BE (sat)
C
CBO
EBO
FE1
FE2
f
T
ob
10 %
PNP SILICON TRANSISTOR
V
V
V
I
I
P
T
T
C (DC)
C (pulse)
J
stg
CBO
CEO
EBO
2
A
*2
A
= 25 C)
MIN.
POWER AMPLIFIER
70
20
= 25 C)
INDUSTRIAL USE
*1
DATA SHEET
*2 T
2 %
55 to +150
C
= 25 C
TYP.
100
150
-10
270
200
200
40
5.0
7.0
0.6
1.3
MAX.
200
2.0
2.0
50
50
W
V
V
V
A
A
C
C
2.2±0.2
UNIT
MHz
5.45
pF
Silicon Power Transistor
V
V
A
A
PACKAGE DIMENSIONS
15.7 MAX.
1
MP-88
2
V
V
V
V
I
I
V
V
C
C
CB
EB
CE
CE
CE
CB
= 5.0 V, I
= 5.0 V, I
3
= 3.0 V, I
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 10 V, I
= 200 V, I
4
5.45
1.0±0.2
TEST CONDITIONS
3.2±0.2
2SA1988
E
E
1.Base
2.Collector
3.Emitter
4.Fin (Collector)
C
= 0.5 V
= 0.5 V
0.6±0.1
C
C
C
C
= 0, f = 1.0 MHz
E
= 0
= 1.0 A
= 3.5 A
= 1.0 mA
= 0
©
4.7 MAX.
1.5
2.8±0.1
1996

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2SA1988 Summary of contents

Page 1

... DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES High Voltage V = 200 V CEO DC Current Gain 200 FE TO-3P Package ORDERING INFORMATION Type Number Package 2SA1988 MP-88 ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage ...

Page 2

... COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -12 -10 -8 10ms -6 100ms 200ms -4 -2 -1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10 m 100 Pulse Width - s 2SA1988 100 120 140 160 T - Case Temperature - =120mA B Pulsed 100mA 80mA 60mA 40mA 20mA -20 -10 -30 - Collector to Emitter Voltage - V ...

Page 3

... Guide to quality assurance for semiconductor devices Semiconductor selection guide AND 1 000 I =10I C B Pulsed V BE (sat) 100 V CE (sat) 10 1.0 10 -0. f=1MHz -100 -1000 2SA1988 DC CURRENT GAIN VS COLLECTOR CURRENT V =- 150 C Pulsed -25 C -0.1 -1.0 - Collector Current - A C Document No. TEI-1202 IEI-1209 C10535E C10943X ...

Page 4

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SA1988 M4 94.11 ...

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