NES1823P-100 NEC, NES1823P-100 Datasheet

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NES1823P-100

Manufacturer Part Number
NES1823P-100
Description
100W L-BAND PUSH-PULL POWER GaAs MESFET
Manufacturer
NEC
Datasheet
Document No. P13839EJ1V0DS00 (1st edition)
Date Published November 1998 N CP(K)
Printed in Japan
DESCRIPTION
IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
passivation for superior performance, thermal characteristics, and reliability.
FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output Power : 100 W TYP.
• High Linear Gain
• High Drain Efficiency: 50 % TYP. @V
ORDERING INFORMATION (PLAN)
ABSOLUTE MAXIMUM RATINGS (T
NES1823P-100
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
Remark To order evaluation samples, please contact your local NEC sales office.
Operation in excess of any one of these parameters may result in permanent damage.
Note T
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
Part Number
C
= 25°C
(Part number for sample order: NES1823P-100)
device.
100W L-BAND PUSH-PULL POWER GaAs MESFET
Parameter
: 11.0 dB TYP.
T-92
The information in this document is subject to change without notice.
PRELIMINARY DATA SHEET
Package
DS
Symbol
A
= 10 V, I
V
V
T
T
= +25°C)
P
I
GSO
I
DS
D
G
stg
ch
T
Dset
ESD protective envelope
= 6 A, f = 2.2 GHz
Supplying Form
N-CHANNEL GaAs MESFET
NES1823P-100
–65 to +175
Ratings
220
440
175
15
–7
76
Note
©
Unit
mA
°C
°C
W
V
V
A
1998

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NES1823P-100 Summary of contents

Page 1

... L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching. ...

Page 2

... A Test Conditions 330 Channel to Case f = 2.2 GHz +42.5 dBm 12 Note I = 6.0 A Total (RF OFF) Dset Preliminary Data Sheet NES1823P-100 MIN. TYP. MAX. Unit 10.0 10.0 V 3.0 dB +150 °C 6.0 8 12.5 MIN. TYP. MAX. Unit 76 A –4.0 –2.6 V 0.6 0.8 ° ...

Page 3

... Those typical RF data are shown as this 50.0 dBm IM = –28 dBc at power matching, G out 3 matching (@2 tone dBm). out matching. Power matching circuit is used our 3 matching is designed as this, input 10 49.3 dBm IM L out Preliminary Data Sheet NES1823P-100 phase-shift, output impedance –31 dBc ...

Page 4

... OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER POWER MATCHING P out Input Power P (dBm) in Preliminary Data Sheet NES1823P-100 – 2.2 GHz Dset Dset ...

Page 5

... DISTORTION MATCHING OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER Input Power P Preliminary Data Sheet NES1823P-100 out – (dBm 2.12 GHz Dset Dset ...

Page 6

... POWER MATCHING 3rd INTERMODULATION DISTORTION vs. 2 TONES OUTPUT POWER tones Output Power P (2 tones) (dBm) out Preliminary Data Sheet NES1823P-100 MHz f = 2.2 GHz Dset Dset ...

Page 7

... DISTORTION MATCHING 3rd INTER MODULATION DISTORTION vs. 2TONES OUTPUT POWER –10 –15 –20 –25 –30 –35 –40 –45 –50 –55 – tones Output Power P Preliminary Data Sheet NES1823P-100 tones) (dBm) out MHz f = 2.12 GHz Dset I Dset ...

Page 8

... OUTPUT POWER –10 –15 –20 –25 –30 –35 –40 –45 –50 –55 – DISTORTION MATCHING tones Output Power P (2 tones) (dBm) out Preliminary Data Sheet NES1823P-100 MHz f = 2.12 GHz Dset Dset Dset ...

Page 9

... START 1 GHz, STOP 3 GHz, STEP 40 MHz S 11 1.0 0.5 0 –2.0 –0.5 –1 +90 +135 180 –135 –90 R 2.0 +135 180 –135 . = 1 max + – max Preliminary Data Sheet NES1823P-100 Marker 2.2 GHz S 12 +90 +45 0 –45 – 0.1 max S 22 1.0 2.0 0.5 0 –2.0 –0.5 –1 max 9 ...

Page 10

... Preliminary Data Sheet NES1823P-100 S 22 ANG. MAG. ANG. 62.5 0.943 171.2 57.4 0.924 166.7 53.7 0.922 165.7 164.2 51.0 0.914 0.904 162.7 48.3 47.1 0.898 161.5 43.5 ...

Page 11

... Additionally, the ground of transformer substate is effective to DC oscillation, so that five screws are arranged at the middle of substrate. connecting to the external matching circuit, in the , conjugate with package impedance, then the performance. The balun circuit is employed for this product. 3 Preliminary Data Sheet NES1823P-100 . Balun technology has some 11 ...

Page 12

... DC CUT 000 pF cavity (depth = 1.2 mm) 4.7 F Series R = 510 12 device Output MS Balun 000 pF 4.7 F transformer device chip C 2 000 pF 4 VGS VDS Preliminary Data Sheet NES1823P-100 0˚ 50 OUT 180˚ Output MS Balun OUT DC CUT cavity (depth = 1.2 mm) ...

Page 13

... FIGURES OF SUBSTRATE (UNIT: mm) BALUN (FACE 20.5 2-C5.5 C2.5 6 – 3 BALUN (BACK) 0.5 0.5 2-C1.5 49.5 5.3 0.5 20.5 19.5 7.5 13.5 21.5 34.5 49.5 Preliminary Data Sheet NES1823P-100 0 3.08 5 adjusting patterns at a 0.5 mm pitch 20.5 22.5 23 28.5 41 43.13 46.5 46. –0.1 13 ...

Page 14

... TRANSFORMER 92 – –0 18.8 5 – 3 2.2 r Preliminary Data Sheet NES1823P-100 4 – – 1 through hole ...

Page 15

... PACKAGE DIMENSIONS (UNIT: mm) S R1.2 0.3 G1, G2: Gate D1, D2: Drain S : Source 35.2 0.3 9.7 0.3 45˚ 4.0 0.3 31.6 0.3 Preliminary Data Sheet NES1823P-100 S 15 ...

Page 16

... NEC sales representative. Soldering Method Partial Heating Pin temperature: 260°C Time: 5 seconds or less (per pin row) For details of recommended soldering conditions, please contact your local NEC sales office. 16 Soldering Conditions Preliminary Data Sheet NES1823P-100 ) For soldering methods and Recommended Condition Symbol – ...

Page 17

... Preliminary Data Sheet NES1823P-100 17 ...

Page 18

... Preliminary Data Sheet NES1823P-100 ...

Page 19

... Preliminary Data Sheet NES1823P-100 19 ...

Page 20

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. Caution NES1823P-100 M4 96. 5 ...

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