NES2427P-60 NEC, NES2427P-60 Datasheet

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NES2427P-60

Manufacturer Part Number
NES2427P-60
Description
60 W S-BAND PUSH-PULL POWER GaAs MES FET
Manufacturer
NEC
Datasheet
Document No. P14997EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
DESCRIPTION
MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high
linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 m
Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal
characteristics, and reliability.
FEATURES
• Push-pull type N-channel GaAs MES FET
• V
• High output power: P
• High linear gain: G
• High power added efficiency:
ORDERING INFORMATION (PLAN)
NES2427P-60
Remark To order evaluation samples, consult your NEC sales representative.
The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
DS
Part Number
= 10.0 V operation
Caution Please handle this device at static-free workstation, because this is an electrostatic
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
60 W S-BAND PUSH-PULL POWER GaAs MES FET
sensitive device.
L
= 12.0 dB TYP.
O (1 dB)
Package
= 60 W TYP.
T-92
PRELIMINARY DATA SHEET
add
= 35 % TYP. @ V
ESD protective envelope
DS
Supplying Form
= 10.0 V, I
Dset
N-CHANNEL GaAs MES FET
= 12.0 A (total), f = 2.50, 2.70 GHz
NES2427P-60
©
2000

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NES2427P-60 Summary of contents

Page 1

... W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P- push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems capable of delivering output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability ...

Page 2

... DS D Channel to Case 2.50, 2.70 GHz 10 2 Note 12.0 A Total (RF OFF) Dset add Note MHz dBm (2 tones total) out Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 MIN. TYP. MAX. Unit 10.0 V 3.0 dB +150 C 12.0 12.0 A 2.5 2 MIN. TYP. MAX. Unit 36.0 A 4.0 2.1 V ...

Page 3

... 2.70 GHz (2 tones 12.0 A (RF OFF), R Dset 14 –10 – –30 8 –40 6 –50 4 –60 2 – tones Output Power P Preliminary Data Sheet P14997EJ1V0DS00 NES2427P- 2.70 GHz out 40 add Input Power P (dBm) in 120 = 2.5 g 100 ...

Page 4

... PACKAGE DIMENSIONS T-92 (UNIT: mm) R1.2±0.3 4 35.2±0.3 9.7±0.3 45˚ 4.0±0.3 31.6±0.3 PIN CONNECTIONS G1 Gate D1 Drain S : Source Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 ...

Page 5

... NEC sales representative. Soldering Method Partial Heating Pin temperature: 260 C or below, Time: 5 seconds or less (per pin row) For details of recommended soldering conditions, please contact your local NEC sales office. Soldering Conditions Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 ). For soldering Recommended Condition Symbol 5 ...

Page 6

... Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 ...

Page 7

... Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). CAUTION Please check with an NEC sales representative for NES2427P-60 The M8E 00. 4 ...

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