PBSS2515F Philips Semiconductors, PBSS2515F Datasheet - Page 2

• Manufacturer Part Number: PBSS2515F
• Description: low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
package.
PNP complement: PBSS3515F.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Sep 21
PBSS2515F
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
Low collector-emitter saturation voltage
High current capabilities
Improved thermal behaviour due to flat leads.
General purpose switching and muting
Low frequency driver circuits
LCD backlighting
Audio frequency general purpose amplifier applications
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
CBO
CEO
EBO
tot
15 V low V
TYPE NUMBER
CEsat
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
transistor in a SC-89 (SOT490) plastic
CEsat
PARAMETER
NPN transistor
2A
MARKING CODE
open emitter
open base
open collector
T
amb
2
25 C
CONDITIONS
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
Fig.1
PIN
1
2
3
1
Top view
Simplified outline (SC-89; SOT490) and
symbol.
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
emitter
collector
3
PARAMETER
2
65
65
MIN.
DESCRIPTION
MAM410
Product specification
1
15
15
6
500
1
100
250
+150
150
+150
PBSS2515F
MAX.
3
2
15
500
1
<500
MAX.
V
V
V
mA
A
mA
mW
C
C
C
UNIT
V
mA
A
m
UNIT