PBSS2515F Philips Semiconductors, PBSS2515F Datasheet - Page 3

• Manufacturer Part Number: PBSS2515F
• Description: low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Sep 21
R
I
I
h
V
R
V
V
f
C
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
th j-a
CEsat
c
15 V low V
= 25 C; unless otherwise specified.
thermal resistance from junction to
ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
PARAMETER
NPN transistor
0.02.
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 10 mA; I
= 200 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 100 mA; V
in free air
= 15 V; I
= 15 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
3
CONDITIONS
C
C
C
C
C
CONDITIONS
B
E
E
E
= 0
= 10 mA
= 100 mA; note 1
= 500 mA; note 1
= 100 mA; note 1
B
B
B
B
= 0
= 0; T
= 0.5 mA
= I
CE
= 10 mA
= 50 mA; note 1
= 50 mA
= 50 mA; note 1
e
= 5 V;
= 0; f = 1 MHz
j
= 150 C
200
150
90
250
MIN.
VALUE
500
300
420
4.4
TYP.
PBSS2515F
Product specification
100
50
100
25
150
250
<500
1.1
0.9
6
MAX.
UNIT
K/W
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A