STX817 ST Microelectronics, STX817 Datasheet - Page 2

• Manufacturer Part Number: STX817
• Description: NPN MEDIUM POWER TRANSISTOR
• Manufacturer: ST Microelectronics

STX817
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
R
CEO(sus)
CE(sat)
BE(sat)
thj-case
h
I
I
thj-amb
I
CEO
CES
EBO
FE
f
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Transition Frequency
C
B
= 0)
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
C
C
C
C
C
C
C
C
C
CE
CE
EB
= -10 mA
= -100 mA
= -1 A
= -100 mA
= -1 A
= -100 mA
= -500 mA
= -1 A
= -0.1 A
= -5 V
= -120 V
= -80 V
case
= 25
Test Conditions
o
C unless otherwise specified)
V
I
I
V
I
I
V
V
B
B
B
B
CE
CE
CE
CE
= -100 mA
= -100 mA
= -10 mA
= -10 mA
Max
Max
= -10 V
= -2 V
= -2 V
= -2 V
Min.
140
-80
80
40
44.6
139
Typ.
50
-0.25
Max.
-500
-100
-0.5
-1.1
-1
-1
o
o
Unit
MHz
mA
C/W
C/W
V
V
V
V
V
A
A