NSS60601MZ4 ON Semiconductor, NSS60601MZ4 Datasheet

NSS60601MZ4

Manufacturer Part Number

NSS60601MZ4

Description

NPN Transistor

Manufacturer

ON Semiconductor

Datasheet

1.NSS60601MZ4.pdf (5 pages)

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Part Number:

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H&T Electronics

Part Number:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS60601MZ4T3G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NSS60601MZ4T3G

Manufacturer:

ON/安森美

Quantity:

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Part Number:

NSS60601MZ4T3G

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Download datasheet (129Kb)

NSS60601MZ4

60 V, 6.0 A, Low V

NPN Transistor

transistors are surface mount devices featuring ultra low saturation

voltage (V

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU's control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR- 4 @ 7.6 mm

2. FR- 4 @ 645 mm

3. Thermal response.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

September, 2007 - Rev. 0

Collector‐Emitter Voltage

Collector‐Base Voltage

Emitter‐Base Voltage

Collector Current - Continuous

Collector Current - Peak

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Junction and Storage

ON Semiconductor's e

Typical applications are DC-DC converters and power management

This is a Pb-Free Device

Derate above 25°C

Junction-to-Ambient

Derate above 25°C

Junction-to-Ambient

(Single Pulse < 10 sec.)

Temperature Range

= 25°C

Characteristic

CE(sat)

Rating

) and high current gain capability. These are designed

, 1 oz. copper traces.

= 25°C)

PowerEdge family of low V

qJA

Symbol

(Note 3)

(Note 1)

(Note 2)

Dsingle

(Note 1)

(Note 2)

CEO

CBO

EBO

, T

stg

PowerEdge devices to be

CE(sat)

-55 to

+150

Max

12.0

Max

15.6

100

800

155

710

6.0

6.5

mW/°C

°C/W

Unit

Vdc

CE(sat)

°C

†For information on tape and reel specifications,

NSS60601MZ4T1G

NSS60601MZ4T3G

NPN LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

EQUIVALENT R

Device

60 VOLTS, 6.0 AMPS

60601

ORDERING INFORMATION

http://onsemi.com

PIN ASSIGNMENT

2.0 WATTS

CASE 318E

Top View Pinout

SOT-223

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb-Free Package

STYLE 1

CE(sat)

B 1

Schematic

(Pb-Free)

SOT-223

Package

Publication Order Number:

C 2,4

www.DataSheet4U.com

E 3

DS(on)

TRANSISTOR

NSS60601MZ4/D

MARKING

DIAGRAM

50 mW

Tape & Reel

60601G

Shipping

AYW

1000/

4000/

†

Related parts for NSS60601MZ4

NSS60601MZ4 Summary of contents

Page 1

... NSS60601MZ4T1G SOT-223 1000/ (Pb-Free) Tape & Reel NSS60601MZ4T3G SOT-223 4000/ (Pb-Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS60601MZ4/D † ...

Page 2

... C B1 Storage ( 750 mA mA Fall ( 750 mA mA Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 2.5 2.0 1.5 1.0 0 NSS60601MZ4 (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO CE(sat) V BE(sat) V BE(on) f ...

Page 3

... I , COLLECTOR CURRENT (A) C Figure 4. Collector-Emitter Saturation Voltage 0.1 A 0.01 0.0001 0.001 0.01 0 BASE CURRENT (A) B Figure 6. Collector Saturation Region NSS60601MZ4 TYPICAL CHARACTERISTICS 400 350 300 250 200 150 100 0.001 150°C -55° ...

Page 4

... Figure 10. Input Capacitance 140 T = 25°C J 120 MHz test 100 0.01 0 COLLECTOR CURRENT (A) C Figure 12. Current-Gain Bandwidth Product NSS60601MZ4 TYPICAL CHARACTERISTICS 1 0.8 0.6 0.4 0 0.001 Figure 9. Base-Emitter Saturation Voltage 140 T = 25°C J 120 MHz ...

Page 5

... COLLECTOR 3. EMITTER 4. COLLECTOR 6.3 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS60601MZ4/D 10° ...

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