NSS60601MZ4 ON Semiconductor, NSS60601MZ4 Datasheet - Page 2

• Manufacturer Part Number: NSS60601MZ4
• Description: NPN Transistor
• Manufacturer: ON Semiconductor

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
Delay (V
Rise (V
Storage (V
Fall (V
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 4)
Collector - Emitter Saturation Voltage (Note 4)
Base - Emitter Saturation Voltage (Note 4)
Base - Emitter Turn-on Voltage (Note 4)
Cutoff Frequency
Input Capacitance (V
Output Capacitance (V
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
= 0.1 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, I
= 500 mA, V
= 1.0 A, V
= 2.0 A, V
= 6.0 A, V
= 0.1 A, I
= 1.0 A, I
= 2.0 A, I
= 3.0 A, I
= 6.0 A, I
= 1.0 A, I
= 1.0 A, V
= 500 mA, V
CC
CC
= 40 Vdc, I
= 6.0 Vdc)
CC
= 30 V, I
= 30 V, I
CC
= 30 V, I
= 30 V, I
B
B
B
B
B
B
CE
CE
CE
CE
= 2.0 mA)
= 0.100 A)
= 0.200 A)
= 60 mA)
= 0.6 A)
= 0.1 A)
C
CE
CE
C
B
E
= 2.0 V)
= 2.0 V)
= 2.0 V)
= 2.0 V)
C
E
= 750 mA, I
C
= 0)
= 750 mA, I
= 0)
= 0)
= 0)
EB
= 2.0 V)
= 10 V, f = 100 MHz)
= 750 mA, I
C
CB
= 750 mA, I
= 5.0 V, f = 1.0 MHz)
= 10 V, f = 1.0 MHz)
Characteristic
B1
B1
2.5
2.0
1.5
1.0
0.5
B1
= 15 mA)
0
= 15 mA)
B1
25
= 15 mA)
= 15 mA)
(T
A
= 25°C unless otherwise noted)
50
Figure 1. Power Derating
T
T
C
A
T
J
, TEMPERATURE (°C)
http://onsemi.com
NSS60601MZ4
75
2
100
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
BE(sat)
Cibo
BE(on)
CBO
h
EBO
f
t
t
FE
t
t
T
d
s
r
f
125
Min
100
150
120
100
100
6.0
60
50
150
0.045
0.085
1350
Typ
400
115
125
37
85
www.DataSheet4U.com
0.040
0.060
0.100
0.220
0.300
0.900
0.900
Max
360
0.1
0.1
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns
V
V
V