BU808DFP ST Microelectronics, BU808DFP Datasheet

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BU808DFP

Manufacturer Part Number
BU808DFP
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
Manufacturer
ST Microelectronics
Datasheet
APPLICATIONS
DESCRIPTION
The BU808DFP is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
ABSOLUTE MAXIMUM RATINGS
June 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
HIGH VOLTAGE CAPABILITY ( > 1400 V )
HIGH DC CURRENT GAIN ( TYP. 150 )
FULLY MOLDED ISOLATED PACKAGE 2KV
DC ISOLATION (U.L. COMPLIANT)
LOW BASE-DRIVE REQUIREMENTS
DEDICATED APPLICATION NOTE AN1184
COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
V
V
V
T
I
P
I
CBO
CEO
EBO
I
CM
T
I
BM
stg
C
B
t ot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
St orage Temperature
Max. Operating Junction Temperature
Parameter
p
c
< 5 ms)
= 25
C
p
E
= 0)
< 5 ms)
= 0)
B
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
TO-220FP
1400
700
150
10
42
5
8
3
6
BU808DFP
1
2
3
Uni t
o
o
W
A
A
V
V
V
A
A
C
C
1/7

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BU808DFP Summary of contents

Page 1

... LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 APPLICATIONS COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END INCHES. DESCRIPTION The BU808DFP is a NPN transistor in monolithic Darlington configuration manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter ...

Page 2

... BU808DFP THERMAL DATA R Thermal Resistance Junction-case t hj-ca se ELECTRICAL CHARACTERISTICS (T Symb ol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CE(sat ) Saturation Voltage V Base-Emitt er BE(s at) Saturation Voltage h DC Current Gain F E INDUCTIVE Storage Time s t Fall Time ...

Page 3

... Derating Curve Collector Emitter Saturation Voltage Power Losses at 16 KHz DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load at 16KHz BU808DFP 3/7 ...

Page 4

... BU808DFP Switching Time Inductive Load at 16KHZ BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current I has to be provided for the lowest gain 100 C (line scan phase). On the other hand, negative base current I must be provided to B2 turn off the power transistor (retrace phase) ...

Page 5

... Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit BU808DFP 5/7 ...

Page 6

... BU808DFP TO-220FP MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 6/7 mm MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. MAX. 0.181 0.106 ...

Page 7

... The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com BU808DFP 7/7 ...

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