SKI-FF530 ETC, SKI-FF530 Datasheet
SKI-FF530
Manufacturer Part Number
SKI-FF530
Description
Infrared emitting diode which mounted high power 850 nm IR CHIP
Manufacturer
ETC
Datasheet
1.SKI-FF530.pdf
(3 pages)
www.DataSheet4U.com
SKI-FF530
1. Feature
2. Absolute maximum ratings.
3. Electrical/optical characteristics.
*Luminous intensity measuring equipment : OPTRONIC CABORATORIES OL-703C PROGRAMMABLE RADIOMETER.
Peak light emitting wavelength
Operation temperature
Soldering temperature
Peak forward current
Storage temperature
Power dissipation
Spectral half wave width
Forward current
Reverse voltage
▷The SKI-FF530 is a infrared emitting diode which mounted high power 850 ㎚ IR CHIP.
▷It is encapsulated in water clear epoxy resin with 5 ㎜ diameter.
▷The radiation substrate material is AlGaAs.
▷ High output power even of a low drive current.
▷ Fast response time
*Radiant intensity
Parameter
Forward voltage
Reverse current
Viewing angle
Response time
Parameter
Symbol
Topr.
Tstg.
Tsol.
Symbol
I
Δλ
Θ½
I
V
P
λp
FM
tr
F
R
D
V
I
P
F
R
O
Test condition
I
I
I
I
I
I
F
V
F
F
F
F
F
R
= 50 ㎃
= 50 ㎃
= 50 ㎃
= 50 ㎃
= 50 ㎃
= 50 ㎃
= 5 V
260 (within 5 sec)
- 30 + 100
- 20 + 80
Ratings
100
150
5
1
Min.
35
Typ.
1.45
±30
850
62
20
30
Max.
1.80
10
( Ta = 2 5℃ )
( Ta = 2 5℃ )
Unit
㎃
㎽
℃
℃
℃
V
A
㎽/㏛
Unit
deg
㎂
㎚
㎚
㎱
V
IRED
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SKI-FF530 Summary of contents
Page 1
... SKI-FF530 1. Feature ▷The SKI-FF530 is a infrared emitting diode which mounted high power 850 ㎚ IR CHIP. ▷It is encapsulated in water clear epoxy resin with 5 ㎜ diameter. ▷The radiation substrate material is AlGaAs. ▷ High output power even of a low drive current. ▷ Fast response time 2 ...
Page 2
... SKI-FF530 ■ Power dissipation vs ambient temperature. 125 100 AMBIENT TEMPERATURE -Ta- ■ Forward current vs forward voltage. 100 www.DataSheet4U.com 0 0.1 0.5 Forward voltage V ■ Spectral distribution. 1.0 ℃ 0.8 0.6 0.4 0.2 0.0 730 770 810 Wavelength λ ■ Output power vs forward current 100 ■ ...
Page 3
www.DataSheet4U.com ...