TLP590 Toshiba, TLP590 Datasheet

TLP590

Manufacturer Part Number

TLP590

Description

TOSHIBA Photocoupler GaAs Ired & Photo-Diode

Manufacturer

Toshiba

Datasheet

1.TLP590.pdf (5 pages)

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Programmable Controllers

Mos Gate Driver

MOS FET Gate Driver

The TOSHIBA TLP590B consists of an aluminum galium arsenide

infrared emitting diode optically coupled to a series connected photo

diode array in a six lead plastic DIP package.

TLP590B is suitable for MOS FET gate driver.

Short Current

Maximum Ratings

(Note 1)

TLP590B

UL recognized: UL1577, file No. E67349

Storage temperature range

Operating temperature range

Lead soldering temperature

(10sec.)

Isolation voltage

(AC, 1 min., R.H. ≤ 60%)

Name

(Note) Application type name for certification test, please

Type

Forward current

Forward current derating

(Ta ≥ 25°C)

Pulse forward current

(100µs pulse, 100 pps)

Reverse voltage

Junction temperature

Foward current

Reverse voltage

Junction temperature

use standard product type name, i.e.

TLP590B(C20): TLP590B

Characteristics

shorted together, and pins 4 and 6 shorted together.

Device considered a two terminal device: Pins 1, 2 and 3

Classification

Standard

C20

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array

(Ta = 25°C)

(Note 1)

20µA

12µA

(min.)

Short Current

∆I

Symbol

10mA

opr

stg

sol

/ °C

TLP590B

Classification

Marking Of

20, blank

-55~125

-40~85

Rating

2500

-0.5

125

260

mA / °C

Vrms

Unit

−

°C

µA

°C

Pin Configuration(top view)

Weight: 0.39g

TOSHIBA

1. : Anode

2. : Cathode

3. : NC

4. : Cathode

6. : Anode

11−7A9

2002-09-25

TLP590B

Unit in mm

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