NP34N055IHE NEC, NP34N055IHE Datasheet

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NP34N055IHE

Manufacturer Part Number
NP34N055IHE
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet
1.NP34N055IHE.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NP34N055IHE
Manufacturer:
NEC/RENESAS
Quantity:
12 500
DataSheet4U.com
www.DataSheet4U.com
DataSheet
Document No.
Date Published
Printed in Japan
4
U
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Notes 1. PW
Channel to Case
Channel to Ambient
.com
Channel temperature 175 degree rated
Super low on-state resistance
R
Low C
Built-in gate protection diode
DS(on)
2. Starting T
iss
D14153EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
= 19 m
: C
iss
10
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 1600 pF TYP.
MAX. (V
ch
s, Duty cycle
= 25 °C, R
Note1
Note2
Note2
A
C
GS
= 25 °C)
= 25 °C)
= 10 V, I
G
= 25
N-CHANNEL POWER MOS FET
1 %
D
= 17 A)
The mark
A
V
R
R
I
I
D(pulse)
V
V
= 25 °C)
GS
D(DC)
E
th(ch-C)
th(ch-A)
T
INDUSTRIAL USE
T
I
P
P
DSS
GSS
AS
stg
AS
ch
T
T
= 20 V
DATA SHEET
SWITCHING
DataSheet4U.com
NP34N055HHE, NP34N055IHE
11 / 72 / 100
–55 to + 175
34 / 27 / 10
shows major revised points.
0 V (see Figure 4.)
±136
1.70
MOS FIELD EFFECT TRANSISTOR
±20
±34
175
125
1.2
55
88
ORDERING INFORMATION
mJ
°C
°C
W
W
°C/W
°C/W
PART NUMBER
V
V
A
A
A
NP34N055HHE
NP34N055IHE
(TO-251)
(TO-252)
©
PACKAGE
TO-251
TO-252
1999,2000

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NP34N055IHE Summary of contents

Page 1

... Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14153EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan 4 DataSheet U .com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION = ° ...

Page 2

... DataSheet4U.com TEST CIRCUIT 2 SWITCHING TIME D.U. PG DSS Duty Cycle 1 % Starting Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE MIN. TYP. MAX. UNIT 2.0 3.0 4 ±10 A 1600 2400 pF 250 380 pF 120 220 pF 21 ...

Page 3

... A 75 100 125 150 175 200 I D(pulse) I D(DC) DataSheet4U.com 10 100 100 m 1 100 PW - Pulse Width - s Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 120 100 100 125 150 175 200 T - Case Temperature - ˚C C Figure4 ...

Page 4

... T = 175˚C A 75˚C 25˚C 55˚C DataSheet4U.com 1 10 100 - Drain Current - A Pulsed 100 1000 - Drain Current - A Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200 160 120 V = Drain to Source Voltage - V DS Figure9 ...

Page 5

... MHz C iss 100 C oss 10 DataSheet4U.com C rss 10 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 100 Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 1.0 0 Source to Drain Voltage - V SD Figure15. SWITCHING CHARACTERISTICS t ...

Page 6

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 DataSheet4U.com 4 DataSheet U .com 2)TO-252 (MP-3Z) 2.3 0.2 0.5 0.1 0.2 0.2 0.5 0.5 0.1 0.1 2.3 TYP. DataSheet4U.com Drain Body Diode Source Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE 2.3 0.2 6.5 0.2 5.0 0.2 0.5 0.1 1.1 0.2 0.9 MAX. 0.8 MAX. 2.3 TYP. 2.3 TYP. 0.8 TYP. ...

Page 7

... DataSheet4U.com 4 DataSheet U .com NP34N055HHE, NP34N055IHE DataSheet4U.com Data Sheet D14153EJ3V0DS 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for DataSheet4U.com NEC (as defined above). 4 DataSheet U .com NP34N055HHE, NP34N055IHE Please check with an NEC sales representative for DataSheet4U.com The M8E 00. 4 ...

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