vn1509nw Supertex, Inc., vn1509nw Datasheet
vn1509nw
Manufacturer Part Number
vn1509nw
Description
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
1.VN1509NW.pdf
(2 pages)
Features
Applications
03/26/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
†
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Ordering Information
MIL visual screening available.
Distance of 1.6 mm from case for 10 seconds.
BV
BV
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
60V
90V
DSS
DGS
/
ISS
and fast switching speeds
R
(max)
3.0
3.0
DS(ON)
(min)
I
2.0A
2.0A
D(ON)
N-Channel Enhancement-Mode
Vertical DMOS FET
-55°C to +150°C
Order Number / Package
BV
BV
300°C
± 20V
VN01506NW
VN1509NW
DGS
DSS
Die
†
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
VN1506
VN1509
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vn1509nw Summary of contents
Page 1
... Vertical DMOS FET Order Number / Package † Die VN01506NW VN1509NW Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices ...
Page 2
Electrical Characteristics Symbol Parameter Drain-to-Source BV DSS Breakdown Voltage V Gate Threshold Voltage GS(th) V Change in V with Temperature GS(th) GS(th) I Gate Body Leakage GSS I Zero Gate Voltage Drain Current DSS I ON-State Drain Current D(ON) R ...