gt60n323 TOSHIBA Semiconductor CORPORATION, gt60n323 Datasheet
gt60n323
Manufacturer Part Number
gt60n323
Description
Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.GT60N323.pdf
(3 pages)
Voltage Resonance Inverter Switching Application
•
•
•
Absolute Maximum Ratings
Equivalent Circuit
diode included between emitter and collector
Enhancement mode type
High speed IGBT : t
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Diode forward current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Gate
Characteristics
diode : t
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Collector
Emitter
f
rr
= 0.19 μs (typ.) (I
= 0.35 μs (max.) (di/dt = −200 A/μs)
1 ms
1 ms
DC
DC
(Ta = 25°C)
symbol
V
V
GT60N323
T
I
I
GES
P
CES
C
I
CP
⎯
I
FP
T
stg
C
F
C
j
= 60 A)
−55~150
Rating
1050
120
190
150
±25
0.8
60
25
50
1
Marking
TOSHIBA
60N323
JAPAN
N･m
Unit
°C
°C
W
V
V
A
A
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2-21F2C
GT60N323
2007-05-30
―
―
Unit: mm
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gt60n323 Summary of contents
Page 1
... 190 150 °C j −55~150 T °C stg ⎯ 0.8 N･m Marking TOSHIBA 60N323 JAPAN 1 GT60N323 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2007-05-30 ...
Page 2
... V 0 − off = di/dt = −200 A/μ ⎯ R th(j-c) ⎯ R th(j-c) 2 GT60N323 Min Typ. Max Unit ⎯ ⎯ ±500 ⎯ ⎯ 1.0 ⎯ 6.0 9.0 ⎯ 2.2 2.8 ⎯ 2.7 3.3 ⎯ ⎯ 6800 ⎯ ⎯ 0.4 ⎯ ⎯ 0.6 ⎯ 0.19 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 GT60N323 20070701-EN 2007-05-30 ...